Transactions on Electrical and Electronic Materials

  • 제8권3호
  • /
  • Pages.110-114
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  • 2007
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs

  • Zhang, Ying-Ying (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Won-Jae (Department of Electronics Engineering, Chungnam National University) ;
  • Zhong, Zhun (Department of Electronics Engineering, Chungnam National University) ;
  • Li, Shi-Guang (Department of Electronics Engineering, Chungnam National University) ;
  • Jung, Soon-Yen (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University) ;
  • Wang, Jin-Suk (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University) ;
  • Lim, Sung-Kyu (Thin Film Team, National Nanofab Center)
  • 발행 : 2007.07.26
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초록

Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride $(Si_3N_4)$ layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at $500^{\circ}C$ for 30 sec. $2000{\AA}$ thick $Si_3N_4$ layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the $Si_3N_4$ layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.

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