한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제40권3호
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  • Pages.144-148
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  • 2007
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  • 1225-8024(pISSN)
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  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
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산소 가스 유량비 변화에 따른 ITO 박막의 전기적 특성에 관한 연구

A Study on the Electrical Properties of ITO Thin Films with Various Oxygen Gas Flow Rate

  • 최동훈 (성균관대학교 신소재공학과 플라즈마 응용 표면기술 연구센터) ;
  • 금민종 (성균관대학교 신소재공학과 플라즈마 응용 표면기술 연구센터) ;
  • 전아람 (성균관대학교 신소재공학과 플라즈마 응용 표면기술 연구센터) ;
  • 한전건 (성균관대학교 신소재공학과 플라즈마 응용 표면기술 연구센터)
  • Choi, Dong-H. (Center for Advanced Plasma Surface Technology, SungKyunKwan University) ;
  • Keum, Min-J. (Center for Advanced Plasma Surface Technology, SungKyunKwan University) ;
  • Jean, A.R. (Center for Advanced Plasma Surface Technology, SungKyunKwan University) ;
  • Han, Jean-G. (Center for Advanced Plasma Surface Technology, SungKyunKwan University)
  • 발행 : 2007.06.30
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초록

To prepare the transparent electrode for electronic devices such as flat panel or flexible displays, solar cells, and touch panels; tin doped $In_2O_3$ (ITO) films with low resistivity and a high transparency were fabricated using a facing target sputtering (FTS) system at the various oxygen gas flow rate. The carrier concentration and mobility of ITO films were measured by Hall Effect measurement. And the transmittance was measured using the UV-VIS spectrometer. As a result, we can obtain the ITO thin films prepared at 10% oxygen gas flow ratio, thickness 150 nm with transmittance 85% and resistivity $8.1{\times}10^{-4}{\Omega}cm$ and surface roughness 5.01 nm.

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참고문헌

  1. G. H. Kim, K. S. Suh, 전자통신동향분석, 21(5) (2006) 129-140
  2. J. Jang, Displays Develop a New Flexibility, Materials Today, 9 (2006) 46-52
  3. H. Kim, J. S. Horwitz, G. P. Kushto, Z. H. Kafafi, D. B. Chrisey, Appl. Phys. Lett., 79 (2001) 284 https://doi.org/10.1063/1.1383568
  4. D. Rudmann, F. J. Haug, M. Krejci, H. Zogg, A. N. Tiwari, Proceedings of the 16th European Photovoltaic Solar Energy Conference, (2000) 298
  5. A. Romeo, M. Arnold, D. L. Batzner, H. Zogg, A. N. Tiwari, Proceedings of PV in Europe: From PV Technology to Energy Solutions, (2002) 377
  6. G. Gu, P. E. Burrows, S. Venkatesh, S. R. Forrest, M. E. Thompson, Opt. Lett., 22(3) (1997) 172-174 https://doi.org/10.1364/OL.22.000172
  7. S. K. Park, J. I. Han, W. K. Kim, M. G. Kwak, in Proc., Society for Information Display, (2000) 514-517
  8. A. Stein, A. Liss, S. Fields, in Proc., Society for Information Display, (1997) 817-820
  9. K. Tominaga, K. Kuroda, O. Tada, Jpn. J. Appl. Phys., 27 (1988) 1176 https://doi.org/10.1143/JJAP.27.1176
  10. H. M. Kim, S. K. Jeung, J. S. Ahn, Y. J. Kang, C. K. Je, Jpn. J. Appl. Phys., 42 (2003) 1 https://doi.org/10.1143/JJAP.42.1
  11. K. Noda, H. Sato, H. Itaya, M. Yamada, Jpn. J. Appl. Phys. 42, (2003) 1 https://doi.org/10.1143/JJAP.42.1
  12. Frank G. Kostlin H. Appl. Phys. A., 27 (1982) 7

피인용 문헌

  1. Study on Electron Temperature Diagnostic and the ITO Thin Film Characteristics of the Plasma Emission Intensity by the Oxygen Gas Flow vol.49, pp.1, 2016, https://doi.org/10.5695/JKISE.2016.49.1.92