Fluorine 첨가에 의한 F-doped SiOC : H 박막의 저 굴절률 특성

Refractive index control of F-doped SiOC : H thin films by addition fluorine

  • 윤석규 (성균관대학교 신소재공학과) ;
  • 강삼묵 (성균관대학교 신소재공학과) ;
  • 정원석 (성균관대학교 신소재공학과) ;
  • 박우정 (성균관대학교 신소재공학과) ;
  • 윤대호 (성균관대학교 신소재공학과)
  • Yoon, S.G. (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Kang, S.M. (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Jung, W.S. (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Park, W.J. (Department of Advanced Materials Engineering, Sungkyunkwan University) ;
  • Yoon, D.H. (Department of Advanced Materials Engineering, Sungkyunkwan University)
  • 발행 : 2007.04.30

초록

저굴절 재료인 F-doped SiOC : H 박막을 Si 웨이퍼와 유리기판위에 rf power, 기판온도, 그리고 가스유량($SiH_4,\;CF_4$ and $N_2O$)을 변수로 하여 PECVD법으로 증착하였다. 기판 온도와 rf power증가에 따라 F-doped SiOC : H 박막의 굴절률은 감소하는 경향을 보였다. $N_2O$ 가스 유량이 감소함에 따라 증착된 박막의 굴절률은 감소하였으며, rf power가 180W 기판온도 $100^{\circ}C$, 그리고 $N_2O$ 가스를 첨가하지 않은 조건에서 증착한 박막은 최소 굴절률인 1.3778을 갖는 것을 알 수 있었다. Rf power 60W에서 180W로 증가시킴에 따라 증착된 박막의 불소 함량은 1.9at%에서 2.4at%로 증가하였으며 이러한 이유로 박막의 굴절률은 감소하는 경향을 나타냈다.

F-doped SiOC : H thin films with low refractive index were deposited on Si wafer and glass substrate by plasma enhanced chemical vapor deposition (PECVD) as a function of rf powers, substrate temperatures, gas rates and their composition flow ratios ($SiH_4,\;CF_4$ and $N_2O$). The refractive index of the F-doped SiOC : H film continuously decreased with increasing deposition temperature and rf power. As $N_2O$ gas flow rate decreased, the refractive index of the deposited films decreased down to 1.3778, reaching a minimum value at rf power of 180W and $100^{\circ}C$ without $N_2O$ gas. The fluorine content of F-doped SiOC : H film increased from 1.9 at% to 2.4 at% as the rf power was increased from 60 W to 180 W, which results in the decrease of refractive index.

키워드

참고문헌

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