참고문헌
- A. T. Huang and K. N. Tu, J. Appl. Phys, 100, 033512 (2006) https://doi.org/10.1063/1.2227621
- S.-H. Chae, X. Zhang, H.-L. Chao, K.-H. Lu and P. S. Ho, in Proceedings of 56rd ECTC, 650 (2006) https://doi.org/10.1109/ECTC.2006.1645719
- M. Ding, G. Wang, B. Chao and P. S. Ho, J. Appl. Phys, 99, 094906 (2006) https://doi.org/10.1063/1.2193037
- J. R. Lloyd, J. Phys. D. Appl, Phys, 32, R109-R118 (1999) https://doi.org/10.1088/0022-3727/32/17/201
- T. L. Shao, Y H. Chen, S. H. Chiu and Chih Chen, J. Appl. Phys, 96(8), 4518-4524 (2004) https://doi.org/10.1063/1.1788837
- Black, J.R. IEEE trans. Electron Devices, ED-16(4), 338 (1969) https://doi.org/10.1109/T-ED.1969.16754
- S. H. Chiu, T. L. Shao and Chih Chen, Appl. Phys. Lett., 88, 022110 (2006) https://doi.org/10.1063/1.2151255
- Y-C. Hsu, C.-K. Chou, P. C. Liu and C. Chen, J. Appl. Phys, 98, 033523 (2005) https://doi.org/10.1063/1.1999836
- T. Y. Lee and K. N. Tu, J. Appl. Phys, 90(9), 4502-4508 (2001) https://doi.org/10.1063/1.1400096
- W. J. Choi, E. C. C. Yeh and K. N. Tu, J. Appl. Phys, 94(9), 5665-5671 (2003) https://doi.org/10.1063/1.1616993
- A. K. Bandyopadhyay and S. K. Sen, J. Appl. Phys, 67(8), 3681-3688 (1990) https://doi.org/10.1063/1.345324
- J. W. Nah, Fei Ren and K. N. Tu, J. Appl. Phys, 99, 023520 (2006) https://doi.org/10.1063/1.2163982
- H. Gan and K. N. Tu, J. Appl. Phys, 97, 063514 (2005) https://doi.org/10.1063/1.1861151
피인용 문헌
- Effects of Surface Finishes and Current Stressing on Interfacial Reaction Characteristics of Sn-3.0Ag-0.5Cu Solder Bumps vol.41, pp.4, 2012, https://doi.org/10.1007/s11664-011-1888-2