DOI QR코드

DOI QR Code

등가회로 모델에 의한 레이저다이오드의 누설전류 해석

Analysis of Leakage Current of a Laser Diode by Equivalent Circuit Model

  • 발행 : 2007.02.28

초록

본 논문에서는 디지털 의료 영상 및 진단 분야 그리고 산업용으로도 활용 가능한 싱글 포톤 계수형 영상센서를 $0.18{\mu}m$ triple-well CMOS(Complementary Metal Oxide Semiconductor) 공정을 사용하여 설계하였다. 설계된 Readout 칩용 싱글 픽셀은 디지털 X-ray 이미지 센서모듈을 간단화 하기 위해 단일 전원전압을 사용하였으며, Preamplifier의 출력 전압인 signal voltage(${\Delta}Vs$)를 크게 하기 위해 Folded Cascode CMOS OP amp를 이용한 Preamplifier를 설계하였으며, 기존의 Readout 칩 외부에서 인가하던 threshold voltage를 Readout 칩 내부에서 생성해 줄 수 있도록 Externally Tunable Threshold Voltage Generator 회로를 새롭게 제안하였다. 그리고, Photo Diode에서 발생하는 Dark Current Noise를 제거하기 위한 Dark Current Compensation 회로를 제안하였으며, 고속 counting이 가능하고, layout 면적이 작은 15bit LFSR(Linear Feedback Shift Resister) Counter를 설계하였다.

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has tern designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

키워드

참고문헌

  1. C. H. Henry, R. A. Logan, and F. R. Merrit, 'The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers,' IEEE J. Quantum Electron., vol. QE-19, no. 6, pp. 947-952, 1983
  2. H. C. Casey, Jr., 'Temperature dependence of the threshold current density in InP-GaO.28In0.72 As0.6P0.4(${\lambda}=1.3{\mu}m$) double heterostructure lasers,' J. Appl. Phys., vol. 56, pp. 1959-1964, 1984 https://doi.org/10.1063/1.334226
  3. E. Yablonovitch, and E. O. Kane, 'Reduction of lasing threshold current density by the lowering of valence band effective mass,' IEEE J. Lightwave Technol., vol. LT-4, no. 6, pp. 504-506, 1986
  4. H. Yasada, R. Iga, Y. Noguchi, and Y. Yoshikuni, 'Pure effects of strain in strained-layer multple-quantum-well lasers,' IEEE J. Quantum Electron., vol. QE-29, no. 4, pp. 1098-1103, 1993
  5. 山田搏仁, 'A Spice Model for Laser diode,' 電子情報通信學會誌, vol. 85, no. 6, pp. 434-437, 2002
  6. MARTINUS P. J. G. VERSLEIJEN, P. I. KUlNDERSMA, GIOK-DJAN D. KHOE, SENIOR MEMBER, IEEE, AND LAMBERTUS J. MEULEMAN, 'Accurate Analysis of dc Electrical Characteristics of $1.3\;{\mu}m$ DCPBH Laser Diodes,' IEEE J. Quantum Electron., vol. 23, no. 6, pp. 925-935, 1987 https://doi.org/10.1109/JQE.1987.1073400
  7. Ho Sung CHO, Dong Hoon JANG, Jung Kee LEE, Kyung Hyun PARK, Jeong Soo KIM, Seung Won LEE, Hong Man KIM and Hyung-MooPARK,' High-Performance Strain-Compensate Multiple Quantum Well Planar Buried Heterostructure Laser Diodes with Low Leakage Current,' Jpn. J. Appl. Phys. vol. 35, no. 3, pp. 1751-1757, 1996 https://doi.org/10.1143/JJAP.35.1751