JSTS:Journal of Semiconductor Technology and Science

  • 제7권4호
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  • Pages.274-280
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  • 2007
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Efficiency Improvement of HBT Class E Power Amplifier by Tuning-out Input Capacitance

  • Kim, Ki-Young (School of Engineering, Information and Communications University) ;
  • Kim, Ji-Hoon (School of Engineering, Information and Communications University) ;
  • Park, Chul-Soon (School of Engineering, Information and Communications University)
  • 발행 : 2007.12.31
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초록

This paper demonstrates an efficiency improvement of the class E power amplifier (PA) by tuning-out the input capacitance ($C_{IN}$) of the power HBT with a shunt inductance. In order to obtain high output power, the PA needs the large emitter size of a transistor. The larger the emitter size, the higher the parasitic capacitance. The parasitic $C_{IN}$ affects the distortion of the voltage signal at the base node and changes the duty cycle to decrease the PA's efficiency. Adopting the L-C resonance, we obtain a remarkable efficiency improvement of as much as 7%. This PA exhibits output power of 29 dBm and collector efficiency of 71% at 1.9 GHz.

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참고문헌

  1. N.O. Sokal and A.D. Sokal, 'Class E-a new Class of high efficiency tuned signle-ended switching power amplifiers,' IEEE J. Solid-State Circuits, vol. SC-10, no. 3, pp. 168-176, June 1975
  2. J.H. Chen, P. Fedorenko and J.S. Kenney, 'A low voltage WCDMA polar transmitter with digital envelope path gain compensation,' IEEE Microwave and Wireless Components Letters, vol. 16, no. 7, pp. 428-430, Jul. 2006 https://doi.org/10.1109/LMWC.2006.877127
  3. J.R. Kim, J.H. Kim, Y.S. Noh and C.S. Park, 'An InGaP/GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets,' IEEE J. Solid-State Circuits, vol. 38, no. 6, pp. 905-910, Jun. 2003 https://doi.org/10.1109/JSSC.2003.811869
  4. J.H. Kim, K.Y. Kim, Y.H. Choi and C.S. Park, 'A power efficient W-CDMA smart power amplifier with emitter area adjusted for output power levels,' IEEE MTT-S Int. Microwave Symp. Dig., Jun. 2004, pp.1163-1166
  5. G.K. Wong, S.I. Long, 'An 800MHz HBT Class-E amplifier with 74% PAE at 3.0 volts for GMSK,' IEEE GaAs IC Symp. Tech. Dig., Oct. 1999, pp. 299-302
  6. D. Milosevic, J. Tang and A. Roermund, 'A highefficiency HBT-based class-E power amplifier for 2 GHz,' in Proc. EGAAS Symp., Oct. 2005, pp. 45-48
  7. E.A. Jarvinen and M.J. Alanen, 'GaAs HBT class-E amplifiers for 2-GHz mobile applications,' in Proc. IEEE RFIC Symp., Jun. 2005, pp. 421-424
  8. K.Y. Kim, J.H. Kim, Y.S. Noh and C.S. Park, 'Cellular/ PCS dual-band MMIC power amplifier of a newly devised single-input single-chain network,' IEEE GaAs IC Symp. Tech. Dig., Nov. 2003, pp. 131-134
  9. K.Y. Kim, J.H. Kim, S.M. Park and C.S. Park, 'Parasitic capacitance optimization of GaAs HBT Class E power amplifier for high efficiency CDMA EER transmitter,' in Proc. IEEE RFIC Symp., Jun. 2007, pp. 733-736

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