JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Efficiency Improvement of HBT Class E Power Amplifier by Tuning-out Input Capacitance

  • Kim, Ki-Young (School of Engineering, Information and Communications University) ;
  • Kim, Ji-Hoon (School of Engineering, Information and Communications University) ;
  • Park, Chul-Soon (School of Engineering, Information and Communications University)
  • Published : 2007.12.31
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Abstract

This paper demonstrates an efficiency improvement of the class E power amplifier (PA) by tuning-out the input capacitance ($C_{IN}$) of the power HBT with a shunt inductance. In order to obtain high output power, the PA needs the large emitter size of a transistor. The larger the emitter size, the higher the parasitic capacitance. The parasitic $C_{IN}$ affects the distortion of the voltage signal at the base node and changes the duty cycle to decrease the PA's efficiency. Adopting the L-C resonance, we obtain a remarkable efficiency improvement of as much as 7%. This PA exhibits output power of 29 dBm and collector efficiency of 71% at 1.9 GHz.

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References

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