JSTS:Journal of Semiconductor Technology and Science

  • 제7권2호
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  • Pages.88-93
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  • 2007
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Analytical Noise Parameter Model of Short-Channel RF MOSFETs

  • Jeon, Jong-Wook (School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (School of Electrical Engineering, Seoul National University)
  • 발행 : 2007.06.30
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초록

In this paper, a simple and improved noise parameter model of RF MOSFETs is developed and verified. Based on the analytical model of channel thermal noise, closed form expressions for four noise parameters are developed from proposed equivalent small signal circuit. The modeling results show a excellent agreement with the measured data of $0.13{\mu}m$ CMOS devices.

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참고문헌

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  2. J. N. Burghartz, M. Hargrove, C. S. Webster, R. A. Groves, M. Keene, K. A. Jenkins, R. Logan, and E. Nowak, 'RF potential of a 0.18-${\mu}m$ CMOS logic device technology,' IEEE Trans. Electron Devices, vol. 47, no. 4, pp. 864-870, April 2000 https://doi.org/10.1109/16.831006
  3. G. Knoblinger, P. Klein, and M. Tiebout , 'A new model for thermal channel noise of deepsubmicron MOSFETs and its application in RFCMOS design,' IEEE J. Solid-State Circuits, vol. 36, pp. 831-837, May 2001 https://doi.org/10.1109/4.918922
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  7. J. Jeon, J. D. Lee, B. G. Park, and H. Shin, ' An Analytical Channel Thermal Noise Model for Deep Sub-micron MOSFETs with Short Channel Effects,' Solid-State Electron, to be published
  8. I. Kwon, M. Je, K. Lee, and H. Shin, 'A Simple and Analytical Parameter Extraction Method of MOSFET for Microwave Modeling,' IEEE Trans. Microwave Theory and Techniques, vol. 50, no. 6, pp. 1503-1509, June 2002 https://doi.org/10.1109/TMTT.2002.1006411
  9. T. H. Lee, 'The Design of CMOS Radio-Fre quency Integrated Circuits,' Cambridge, U.K. : Cambridge Univ. Press, 1998
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  6. Experimental Investigation of Quasi-Ballistic Carrier Transport Characteristics in 10-nm Scale MOSFETs vol.10, pp.5, 2011, https://doi.org/10.1109/TNANO.2010.2091421
  7. A Unified Channel Thermal Noise Model for Short Channel MOS Transistors vol.13, pp.3, 2013, https://doi.org/10.5573/JSTS.2013.13.3.213
  8. Accurate Extraction of Excess Channel Thermal Noise Coefficient in Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model 4 vol.48, pp.4, 2009, https://doi.org/10.1143/JJAP.48.04C037