전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제56권2호
  • /
  • Pages.349-354
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  • 2007
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

$BCl_3/Ar$ 유도 결합 플라즈마 시스템에서 이온 에너지 분포에 따른 $HfO_2$ 박막의 식각

The Etching of $HfO_2$ Thin Film as the ion Energy Distributions in the $BCl_3/Ar$ Inductively Coupled Plasma System

  • 발행 : 2007.02.01
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초록

In this work, we investigated etching characteristics of $HfO_2$ thin film and Si using inductive coupled plasma(ICP) system. The ion energy distribution functions in an ICP system was analyzed by quadrupole mass spectrometer(QMS) with an electrostatic ion energy analyzer. The maximum etch rate of $HfO_2$ thin film is 85.5 nm/min at a $BCl_3/(BCl_3+Ar)$ of 20 % and decreased with further addition of $BCl_3$ gas. From the QMS measurements, the most dominant positive ion energy distributions(IEDS) showed a maximum at 20 % of $BCl_3$. These tendency was very similar to the etch characteristics. This result agreed with the universal energy dependency of ion enhanced chemical etching yields. And the maximum selectivity of $HfO_2$ over Si is 3.05 at a $O_2$ addition of 2 sccm into the $BCl_3/(BCl_3+Ar)$ of 20 % plasma.

키워드

참고문헌

  1. K.J. Hubbard and D.G. ScWom, 'Thermodynamic stability of binary oxides in contact With silicon', J. Mater. Res., Vol. 11, Issue 11, pp. 2757-'2:776, 1996 https://doi.org/10.1557/JMR.1996.0350
  2. K.Onishi, L. Kang, R. Choi, E. Dharmarajan, S. Gopalan, Y. Jeon, C.S. Kang, RH. Lee, R. Nieh, and J.C. Lee, 'Dopant Penetration Effects on Polysilicon Gate $HfO_{2}$ MOSFETs,' , Symp. VLSI Tech. p. 131. 2001
  3. M. Balog, M. Schieber, M. Michiman, and S. Patai, 'Chemical vapor deposition and characterization of $HfO_{2}$ films from organo-hafnium compounds', Thin Solid Films, Vol. 41, Issue 3, pp. 247-259, 1977 https://doi.org/10.1016/0040-6090(77)90312-1
  4. B. Cheng, M. Cao, R. Rao, A. Inain, P.V. Voorde, W.M. Greene, J.M.C. Stork, Z. Yu, P.M. Zeitzoff, and J.C.S. Woo, 'The impact of high-k gate dielectrics and metal gate electrodes on sub-l00 nm MOSFETs', IEEE Tran. Electron Device, Vol. 46, Issue 7, pp. 1537-1544, 1999 https://doi.org/10.1109/16.772508
  5. B.B. Lee, L. Kang, R. Nieh. W.J, Qi. and J,C. Lee, 'Thermal stability and electrical characteristics of ultra thin hafnium oxide gate dielectric reoxidized with rapid thermal annealing', Appl. Phys. Lett., Vol. 76, Issue 14, pp. 1926-1928, 2000 https://doi.org/10.1063/1.126214
  6. C.T. Liu, 'Circuit requirement and integration challenges of thin gate dielectrics for ultra small MOSFETs', IEDM Tech. Dig., pp. 747-750, 1998
  7. P.J. Spencer, 'Hafnium: Physico-chemical Properties of its Compound and Alloys', IAEA, p. 25, 1981
  8. DR Lide, 'CRC handbook of chemistry and physics', CRC Press LLC, p. 4-66, 1998
  9. 김관하, 김창일, '사중극자 질량분석기를 이용한 BCI3/Ar 유도결합 플라즈마 특성 진단', 대한전기학회 논문지 C부문, 18권, 4호, pp. 204-208, 2006