한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제20권2호
  • /
  • Pages.101-105
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  • 2007
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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RFCVD 장치를 이용하여 성장한 실리콘 나노와이어의 특성

Properties of Silicon Nanowires grown by RFCVD

  • 김재훈 (원광대학교 반도체.광 디스플레이학부) ;
  • 이형주 (원광대학교 반도체.광 디스플레이학부) ;
  • 신석승 (원광대학교 반도체.광 디스플레이학부) ;
  • 김기영 (원광대학교 반도체.광 디스플레이학부) ;
  • 고춘수 (원광대학교 반도체.광 디스플레이학부) ;
  • 김현숙 (차세대 방사선산업기술 지역혁신센터) ;
  • 황용규 (원광대학교 반도체.광 디스플레이학부) ;
  • 이충훈 (원광대학교 반도체.광 디스플레이학부)
  • 발행 : 2007.02.01
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초록

We have synthesized silicon nanowires by using RFCVD(Radio Frequency Chemical Vapor Deposition) system on Au deposited p-type Si(100) wafers, and investigated their physical and electrical properties. The silicon nanowires had been grown in the atmospheres of $H_{2},\;N_{2}\;and\;SiH_{4}$ at 10 Torr at the substrate temperatures of $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$ respectively. FE-SEM analysis revealed that diameters of the silicon nanowires are $50{\sim}60nm$ with the length of several ${\mu}m$. XRD analysis showed that the growth direction of the nanowires is Si[111]. Field emission characteristics showed that the turn-of voltages at the current of $0.01\;mA/cm^{2}$ are $10\;V/{\mu}m\;and\;8.5\;V/{\mu}m$ for the wires grown at $700{\pm}5^{\circ}C\;and\;810{\pm}5^{\circ}C$, respectively.

키워드

참고문헌

  1. S. S. Iyer and Y. H. Xie, 'Light emission from silicon', Science, Vol. 26, p. 40, 1993
  2. K. H. Jung, S. Shih, D. L. Kwong, T. George, T. L. Lin, H. Y. Liu, and J. Zavada, 'Photoluminescence, structure, and composition of laterally anodized porous Si', J. Electrochem. Soc., Vol. 139, p. 3363, 1992 https://doi.org/10.1149/1.2069079
  3. Y. Cui and C. M. Lieber, 'Functional nanoscale electronic devices assembled using silicon nanowire building blocks', Science, Vol. 291, p. 851, 2001 https://doi.org/10.1126/science.291.5505.851
  4. Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, 'High performance silicon nanowire field effect transistors', Nano Letters, Vol. 3, p. 149, 2003 https://doi.org/10.1021/nl025875l
  5. D. D. D. Ma, C. S. Lee, F. C. K. Au, S. Y. Tong, and S. T. Lee, 'Small-diameter silicon nanowire surfaces', Science, Vol. 299, p. 1874, 2003 https://doi.org/10.1126/science.1080313
  6. A. M. Morales and C. M. Liber, 'A laser ablation method for the synthesis of crystalline semiconductor nanowires', Science, Vol. 279, p. 208, 1998 https://doi.org/10.1126/science.279.5348.208
  7. J. D. Holmes, K. P. Johnston, R. C. Doty, and B. A. Korgel, 'Control of thickness and orientation of solution-grown silicon nanowires', Science, Vol. 287, p. 1471, 2000 https://doi.org/10.1126/science.287.5457.1471
  8. D. P. Yu, Y. J. Xing, Q. L. Hang, H. F. Yan, J. Xu, Z. H. Xi, and S. Q. Feng, 'Controlled growth of oriented amorphous silicoon nanowires via a solid-liquid-solid(SLS) mechanism', Physica E, Vol. 9, p. 305, 2001 https://doi.org/10.1016/S1386-9477(00)00202-2
  9. K. K. Lew, C. Reuther, A. H. Carim, J. M. Redwing, and B. R. Martn, 'Templatedirected vapor-liquid-solid growth of silicon nanowires', J. Vac. Sci. Technol. B, Vol. 20, p. 389, 2002 https://doi.org/10.1116/1.1430240
  10. T. I. Kamins, R. S. Williams, Y. Chen, Y. L. Chang, and Y. A. Chang, 'Chemical vapor deposition of Si nanowires nucleated by $TiSi_{2}$ islands on Si', Appl. Phys. Lett., Vol. 76, p. 562, 2000 https://doi.org/10.1063/1.125852
  11. D. P. Yu, C. S. Lee, I. Bello, G. W. Zhou, Z. G. Bai, Z. Zhang, and S. Q. Feng, 'Synthesis of nano-scale silicon wires by excimer laser ablation at high temperature', Solid State Commun., Vol. 105, p. 403, 1998 https://doi.org/10.1016/S0038-1098(97)10143-0
  12. R. S. Wagner and W. C. Ellis, 'Vaporliquid-solid mechanism of single crystal growth', Appl. Phys. Lett., Vol. 4, p. 8, 1964
  13. C. Li, G. Fang, S. Sheng, Z. Chen, J. Wang, S. Ma, and X. Zhao, 'Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays', Physica E, Vol. 30, p. 169, 2005 https://doi.org/10.1016/j.physe.2005.08.005
  14. B.-R. Huang, J.-F. Hsu, and C.-S. Huang, 'The effects on the field emission properties of silicon nanowires by different pretreatment techniques of Ni catalysts layers', Diamond Relat. Mater., Vol. 14, p. 2105, 2005 https://doi.org/10.1016/j.diamond.2005.08.058
  15. Y. Chen, D. T. Shaw, and L. Guo, 'Field emission of different oriented carbon nanotubes', Appl. Phys. Lett., Vol. 76, p. 2469, 2000 https://doi.org/10.1063/1.126379