ETRI Journal
- 제28권2호
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- Pages.253-256
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- 2006
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
A New Strained-Si Channel Power MOSFET for High Performance Applications
- Cho, Young-Kyun (IT Convergence & Components Laboratory, ETRI) ;
- Roh, Tae-Moon (IT Convergence & Components Laboratory, ETRI) ;
- Kim, Jong-Dae (IT Convergence & Components Laboratory, ETRI)
- 투고 : 2005.08.04
- 발행 : 2006.04.30
초록
We propose a novel power metal oxide semiconductor field effect transistor (MOSFET) employing a strained-Si channel structure to improve the current drivability and on-resistance characteristic of the high-voltage MOSFET. A 20 nm thick strained-Si low field channel NMOSFET with a