Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Phase Change Properties of Amorphous Ge1Se1Te2 and Ge2Sb2Te5 Chalcogenide Thin Films

비정질 Ge1Se1Te2 과 Ge2Sb2Te5 칼코게나이드 박막의 상변화특성

  • 정홍배 (광운대학교 전자재료공학과) ;
  • 조원주 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Published : 2006.10.01
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Abstract

Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

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References

  1. G. Wicker, 'Nonvolatile, high density, high performance phase change memory', SPIE, Vol. 3891 p. 2, 1999
  2. S. R. Ovshinsky, 'Reversible electrical switching phenomena in disordered structures', Phys. Rev. Letters, Vol. 21, p. 1450, 1968
  3. S. J. Yang, J. M. Lee, K. Shin, and H. B. Chung, 'The phase transition with electric field in ternary chalcogenide thin films', Trans. EEM, Vol. 5, No.5, p. 185, 2004
  4. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, 'Rapid-phase transitions of $GeTe-Sb_2Te_3$ pseudo-binary amorphous thin films for an optical disk memory', J. Appl, Phys., Vol 69, No.5, p. 2849, 1991 https://doi.org/10.1063/1.348620
  5. J. H. Yi, Y. H. Ha, J. H. Park, B. J. Kuh, H. Horii, Y. T. Kim, S. O. Park, Y. N. Hwang, S. H. Lee, S. J. Ahn, S. Y. Lee, J. S. Hong, K. H. Lee, N. I. Lee, H. K. Kang, U. I. Chung, and J. T. Moon, 'Novel cell structure of PRAM with thin metal layer inserted GeSbTe', IEDM Tech. Dig., p. 901, 2003
  6. K. Nakayama, K. Kojima, F. Hayakawa, and Y. Imai, 'Subrmicron nonvolatile memory cell based on reversible phase transition in chalcogenide glasses', Jpn, J. Appl. Phys., Vol 39, p. 6157, 2000
  7. J. M. Lee, K. Shin, C. H. Yeo, and H. B. Chung, 'Electrical switching studies of amorphous $Ge_1Se_1Te_2$ thin film for a high-performance nonvolatile phase-change memory', Jpn. J. Appl. Phys., Vol 45, No. 6B, p. 5467, 2006 https://doi.org/10.1143/JJAP.45.5467
  8. J. M. Lee S. J. Yang, K. Shin, and H. B. Chung, 'The study on the characteristic of phase transition in difference thickness of $Se_1Sb_2Te thin film', Trans. EEM, Vol 5, No.6, p. 241, 2004
  9. H. Tanaka, T. Nishihara, T. Ohisuka, K. Morimoto, N. Yamada, and K. Morita, 'Electrical switching phenomena in a phase change material in contact with metallic nanowires', Jpn. J. Appl, Phys., Vol 41, p. L1443, 2002
  10. J. M. Lee and H. B. Chung, 'Characteristics of chalcogenide $Ge_1Se_1Te_2$ thin film for nonvolatile phase change memory device', Trans. KIEE, Vol 55C, No.6, p. 297, 2006
  11. N. Afify, A Gaber, I. Abdalla, and H. Talaat, 'Structural study of chalcogenide glasee $Se_{0.7}Te_{0.3}$', Physica B, Vol 229, p. 167, 1997