SLS Technology for High Performance Poly-Si TFTs and Its Application to Advanced LCD and SOG

  • 류명관 (비오이 하이디스테크놀로지(주) LCD 연구소) ;
  • 손곤 (비오이 하이디스테크놀로지(주) LCD 연구소) ;
  • 김천홍 (비오이 하이디스테크놀로지(주) LCD 연구소) ;
  • 이정열 (비오이 하이디스테크놀로지(주) LCD 연구소)
  • Published : 2006.09.01

Abstract

SLS crystallization and CMOS LTPS process have been developed for high performance and uniform characteristics. By strictly optimizing SLS optics in conventional 2 shot SLS process, threshold voltage variation of 720 pixel TFTs in 2.2-inch QVGA panel (240xRGB) was remarkably decreased from 1.89 V to 0.56 V of 3sigma value. Mobility of the channel doped NTFT and PTFT for circuits were $146\;and\;38cm^{2}/Vs$, respectively. Functional unit circuits for SOG were also fabricated and properly operated.

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