Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Lateral Distribution of Implanted Ions in Silicon

  • Jung, Won-Chae (Department of Electronic Engineering, Kyonggi University) ;
  • Kim, Hyung-Min (Department of mechanical System Design Engineering, Kyonggi University)
  • Published : 2006.08.01
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Abstract

Due to the limitations of the channel length, the lateral spread for two-dimensional impurity distributions is critical for the analysis of devices including the integrated complementary metal oxide semiconductor (CMOS) circuits and high frequency semiconductor devices. The developed codes were then compared with the two-dimensional implanted profiles measured by transmission electron microscope (TEM) as well as simulated by a commercial TSUPREM4 for verification purposes. The measured two-dimensional TEM data obtained by chemical etching-method was consistent with the results of the developed analytical model, and it seemed to be more accurate than the results attained by a commercial TSUPREM4. The developed codes can be applied on a wider energy range $(1KeV{\sim}30MeV)$ than a commercial TSUPREM4 of which the maximum energy range cannot exceed 1MeV for the limited doping elements. Moreover, it is not only limited to diffusion process but also can be applied to implantation due to the sloped and nano scale structure of the mask.

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References

  1. W. C. Jung, 'A study of boron profiles by high energy ion implantation in silicon', J. of KIEEME (in Korean), Vol. 15, No.4, p. 289, 2002
  2. W.-C. Jung, 'I-V and C-V measurements of fabricated $P^{+}/N^{+}$ junction diode in antimony doped (111) silicon', Trans. EEM, Vol. 3, No. 2, p. 10, 2002
  3. W.-C. Jung, 'A study of experiment and developed model by antimony high energy implantation in silicon', J. of KIEEME(in Korean), Vol. 17, No. 11, p. 1156, 2004
  4. H. Ruecker, B. Henemann, R. Bath, D. Bolze, V. Melnik, D. Krueger, and R. Kurps, 'Formation of shallow source/drain extensions for metal-oxide-semiconductor field-effect', Vol. 82, No.5, p. 826, 2003 https://doi.org/10.1063/1.1542932
  5. J. P. Biersack, 'Basic physical aspects of high energy implantation', Nucl. Inst. and Meth. B, Vol. 35, p. 205, 1988 https://doi.org/10.1016/0168-583X(88)90272-8
  6. H. H. Andersen and J. F. Ziegler, 'Hydrogen, stopping power and ranges in all elements', The Stopping and Ranges of Ions in Matter edited by J. F. Ziegler, Pergamon, New York, Vol. 6, p. 64, 1977
  7. U. Littmark and J. F. Ziegler, 'Handbook of range distributions for energetics ions in all elements', The Stopping and Ranges of Ions in Matter edited by J. F. Ziegler, Pergamon, New York, Vol. 6, p. 45, 1980
  8. J. F. Ziegler, 'Ion Implantation Science and Technology', Ion Implantation Technology Co., New Jersey, p. 125, 1996
  9. J. F. Ziegler, 'The stopping of energetic light ions in elemental matter', J. Appl. Phys., Vol. 85, No.3, p. 1249, 1999 https://doi.org/10.1063/1.369844
  10. J. F. Ziegler, 'SRIM 2000 manual', http://www.srim.org
  11. J. F. Ziegler, J. P. Biersack, and U. Littmark, 'The stopping and range of ions in matter', Vol. 1, New York: Pergamon Press, p. 45, 1985
  12. K. M. Klein, C. Park, and A. F. Tasch, 'Ultra shallow junction formation in silicon using implantation', IEEE Trans. Electron Devices ED Vol. 39, p. 1614, 1992 https://doi.org/10.1109/16.141226
  13. A. F. Tasch and S. K. Banerjee, 'Ultra shallow junction formation in silicon using ion implantation', Nucl. Inst. and Meth. In Phys. B, Vol. 112, p. 177, 1996 https://doi.org/10.1016/0168-583X(95)01246-X
  14. R. Brindos, P. Keys, K. S. Jones, and M. E. Law, 'Effects of arsenic doping on {311} defect dissolution in silicon', Appl. Phys. Letters, Vol. 75, No.2, p. 229, 1999 https://doi.org/10.1063/1.124331
  15. H. Cerva, 'Two-dimensional delineation of shallow junctions in silicon by selective etching of transmission electron microscopy cross sections', J. Vac. Sci. Technol. B, Vol. 10, No.1, p. 491, 1992 https://doi.org/10.1116/1.586381
  16. M. A. gribelyuk, M. R. McCartney, J. Li, C. S. Murthy, P. Ronsheim, B. Doris, J. S. McMurray, S. Hegde, and d. J. Smith, 'Mapping of electrostatic potential in deep submicron CMOS devices by electron holography', Phy. Rev. Lett., Vol. 89, No. 2, p. 1, 2002
  17. K. D. Yoo, C. D. Marsh, and G. R. Booker, 'Two-dimensional dopant concentration profiles from ultra-shallow junction metal-oxide-semiconductor field-effect transistors using the etch/transmission electron microscopy method', Appl. Phys. Letters, Vol. 80, No. 15, p. 2687, 2002 https://doi.org/10.1063/1.1469652
  18. Synopsys Inc., 'http://www.synopsis.com', TCAD, Taurus TSUPREM4, 2006
  19. J. D. Plummer, M. D. Deal, and P. B. Griffin, 'Silicon VLSI Technology', Prentice Hall, Inc., p. 451, 2000
  20. R. B. Fair, 'The role transient damage annealing in shallow junction formation', Nucl. Instr. and Meth. B, Vol. 37/38, p. 371, 1989 https://doi.org/10.1016/0168-583X(89)90206-1
  21. R. C. Jaeger, 'Introduction to Microelectronic Fabrication', Prentice Hall, New Jersey, 2002
  22. R. P. Webb and E. Maydell, 'Comparisons of fast algorithms for calculation of range profiles in layered structures', Nucl. Inst. and Meth. B, Vol. 33 p. 117, 1988 https://doi.org/10.1016/0168-583X(88)90526-5
  23. R. Smith, 'Atomic and Ion Collisions in Solids and at Surface', Cambridge University Press, 1997