The Characteristics of c-BN Thin Films on High Speed Steel by Electron Assisted Hot Filament C.V.D Systems

EACVD법에 의한 고속도강에의 c-BN박막형성 및 특성에 관하여

  • Lee, Gun-Young (Department of Advanced Materials Science and Engineering, Dankook University) ;
  • Choe, Jean-Il (Department of Advanced Materials Science and Engineering, Dankook University)
  • 이건영 (단국대학교 신소재공학과) ;
  • 최진일 (단국대학교 신소재공학과)
  • Published : 2006.06.30

Abstract

The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

Keywords

References

  1. Y. N. Xuard, W. Y. Ching, Phys. Rev., B, 44 (1991) 7787 https://doi.org/10.1103/PhysRevB.44.7787
  2. S. Bohr, R. Haubner, B. Lux, Diamond and Related Mater, 4 (1995) 714 https://doi.org/10.1016/0925-9635(94)05224-7
  3. A. Soltani, P. Thevenin, A. Bath, Diamond and Relat Mater, 10 (2001) 1369 https://doi.org/10.1016/S0925-9635(00)00416-7
  4. M. J. Land, J. Roberts, J. Electrotlem. Soc., 115 (1968) 423 https://doi.org/10.1149/1.2411238
  5. J. I Choe, Synthesis of Diamond Thin Films by Hot Filament CVD, J. Korea Association of Crystal Growth, 8(2) (1998) 227
  6. S. Moyojima, Y. Tamura, K. Sugiyama, Thin Solid Films, 88 (1982) 269 https://doi.org/10.1016/0040-6090(82)90056-6
  7. S. Reinke, M. Kuhr, W. Kulish, Diamond and Relat. Mater, 3 (1994) 341 https://doi.org/10.1016/0925-9635(94)90183-X
  8. T. H. Yuzuriha, W. E. Miynko, D. W. Hess, J. Vac. Sci. Technology, A3 (1985) 2135
  9. M. Satou, F. Fujimoto, Jpn. J. Appl. Phys., 22(3) (1983) L171 https://doi.org/10.1143/JJAP.22.L171
  10. A. Chayhara, H. Yokiyama, T. Imura, Y. Osaka, Jpn. J. Appl. Phys., 26 (1987) 1435 https://doi.org/10.1143/JJAP.26.L1435
  11. R. Seitz, J. S. Koehler, Progress in Solid State Physis, Vol. 2, Academic, New York, (1957) 30
  12. D. R. Mackenzie, W. D. Mcfall, W. G. Sainty, C. A. Davis, R. E. Collins, Diamond and Relat. Mater, 2 (1993) 970 https://doi.org/10.1016/0925-9635(93)90260-9
  13. K. Janishowsky, W. Evert, E. Kohn, Diamond and Relat. Mater, 12 (2003) 336 https://doi.org/10.1016/S0925-9635(02)00294-7