참고문헌
- S. Nakamura and G. Fasol, 'The Blue Laser Diode', Springer, New York, p. 129, 1997
- S. Nakamura, T. Mokia, and M. Senoh, 'Candela-class high-brightness InGaN/AIGaN double-heterostructure blue-light-emitting diodes', Appl. Phys. Lett., Vol. 64, No. 13, p. 1689, 1994
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyodo, 'Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime', Appl. Phys. Lett., Vol. 70, No.7, p. 868, 1997 https://doi.org/10.1063/1.118300
-
M. A. Khan, M. S. Shur, J. N. Kuzunia, Q. Chen, J. Burm, and W. Schaff, 'Temperature activated conductance in GaN/AIGaN heterostructure field effect transistors operating at temperatures up to
$300^{\circ}C$ ', Appl. Phys. Lett., Vol. 66, No.9, p. 1083, 1995 https://doi.org/10.1063/1.113673 - O. Aktas, Z. F. Fan, S. N. Mmohammad, A. E. Botchkarev, and H. Morkoc, 'High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors', Appl. Phys, Lett., Vol. 69, No. 25, p. 3872, 1996 https://doi.org/10.1063/1.117133
- Eric Mounier, 'Automotive LED take-up hinges on cost reduction', Compound Semiconductor, Vol. 9, No.3, p. 35, 2003
- K. M. Chang, C. C. Long, and C. C. Cheng, 'The silicon nitride film formed by ECR-CVD for GaN-Based LED passivation', Phys. Stat. Sol. (a), Vol. 188, No. 1, p. 175, 2001 https://doi.org/10.1002/1521-396X(200111)188:1<175::AID-PSSA175>3.0.CO;2-H
- E. Fred Schubert, 'Light-Emitting Diodes', Cambridge University Press, p. 138, 2003