Transactions on Electrical and Electronic Materials

  • 제7권3호
  • /
  • Pages.149-153
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  • 2006
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Rutile Ti1-xCoxO2-δ p-type Diluted Magnetic Semiconductor Thin Films

  • Seong, Nak-Jin (Department of Materials Science and Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University) ;
  • Cho, Young-Hoon (Quantum Materials Research Team, Korea Basic Science Institute) ;
  • Jung, Myung-Hwa (Quantum Materials Research Team, Korea Basic Science Institute)
  • 발행 : 2006.06.01
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초록

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

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참고문헌

  1. Twardowski. A., 'Diluted magnetic III-V semiconductors', Acta. Phys. Pol. A, Vol. 98, p. 203, 2000 https://doi.org/10.12693/APhysPolA.98.203
  2. Y. Matsumoto, M. Murakami, T. Shono, T. Hasegawa, T. Fukumura, M. Kawasaki, P. Ahmet, T. Chikyow, S. Koshihara, and H. Koinuma, 'Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide', Science, Vol. 291, p. 854, 2001 https://doi.org/10.1126/science.1056186
  3. S. A. Chambers, S. Thevuthasan, R. F. C. Farrow, R. F. Marks, J. U. Thiele, L. S. Folks, M. G. Samant, A. J. KeUock, N. Ruzycki, D. L. Ederer, and U. Diebold, 'Epitaxial growth and properties of ferromagnetic co-doped $TiO_2$, anatase', Appl. Phys. Lett., Vol. 79, p. 3467, 2001 https://doi.org/10.1063/1.1420434
  4. I. -B. Shim, S.-Y. An, C. S. Kim, S. -Yo Choi, and Y. W. Park, 'Growth of ferromagnetic semiconducting cobalt-doped anatase titanium thin films', J. Appl. Phys., Vol. 91, p. 7914, 2002 https://doi.org/10.1063/1.1451880
  5. Y. Matsumoto, R. Takahashi, M. Murakami, T. Koida, X.-J. Fan, T. Hasegawa, T. Fukumura, M. Kawasaki, S.-Y. Koshihara, and H. Koinuma, 'Ferromagnetism in Co-doped $TiO_2$ rutile thin films grown by laser molecular beam epitaxy', Jpn. J. Appl. Phys., Vol. 40, p. L1204, 2001 https://doi.org/10.1143/JJAP.40.L1204
  6. J. S. Higgins, S. R. Shinde, S. B. Ogale, T. Venkatesan, and R. L. Greene, 'Hall effect in cobalt-doped $TiO_{2-\delta}$', Phys. Rev. B, Vol. 69, p. 073201, 2004 https://doi.org/10.1103/PhysRevB.69.073201
  7. S. R. Shinde, S. B. Ogale, J. S. Higgins, H. Zheng, A. J. Millis, V. N. Kulkarni, R. Rarnesh, R. L. Greene, and T. Venkatesan, 'Co-occurrence of superpararnagnetism and anomalous hall effect in highly reduced cobalt-doped rutile $TiO_{2-\delta}$ films', Phys. Rev. Lett., Vol. 92, p. 166601, 2004 https://doi.org/10.1103/PhysRevLett.92.166601
  8. S. B. Baek and M. H. Kim, 'Electrical properties and point defect types of semiconducting rutile', Koean. J. of Mater. Res., Vol. 8, p. 931, 1998
  9. H. Ueda, K. Kitazawa, H. Takagi, and T. Matsumoto, 'Strong carrier concentration dependence of pressure effect on bipolaronic transitions in magneli phase $Ti_nO_{2n-1}$ (n=4,5,6)', J. Phys. Soc. Jpn., Vol. 71, p. 1506, 2002 https://doi.org/10.1143/JPSJ.71.1506
  10. A. D. Inglis, Y. Lepage, P. Strobe, and C. M. Hurd, 'Electrical conductance of crystalline $Ti_nO_{2n-1}$ for n=4-9', J. Phys. C, Vol. 16, p. 317, 1983 https://doi.org/10.1088/0022-3719/16/2/015
  11. N. J. Seong, W. S. Lee, M. H. Jung, and S. G. Yoon, 'Ferromagnetic and electrical properties in ferromagnetic semiconductor $Ti_{1-x}CO_xO_{2-\delta}$ :Sb thin films grown by pulsed laser deposition', J. Appl. Phys., Vol. 97, p. 10D326, 2005 https://doi.org/10.1063/1.1855455