• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.189-193
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• 1996

Magnetoresistance field sensitivity and magnetostriction were measured as a function of annealing temperature for NiFe/Ag multilayer systems displaying giant magnetoresistance. Key multilayer configurations such as number of NiFe/Ag bilayers and Ag spacer thickness were varied. A high giant magnetoresistance ratio up to 5% with zero magnetostriction and high magnetoresistance field sensitivity was possible to achieve simultaneously with optimal sample geometry and annealing condition.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.447-450
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• 1995

Using Boltzmaan equation by introducing the potential barrier scattering which buit by Hall-effect, a possible origin of giant magnetoresistance in multilayers is proposed. The calculated results may be well explain the giant magnetoresistance observed in multilayers.

• Journal of the Korean institute of surface engineering
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• v.32 no.1
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• pp.61-66
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• 1999

The Spin-dependent tunneling magnetoresistance (TMR) effect was observed in $NiFe/Al_2O_3$/Co thin films. The samples were prepared by magnetron sputtering in a system with a base pressure of $3\times10^{-6}$Torr. the insulating $Al_2O_3$layer was prepared by r.f. plasma oxydation method of a metallic Al layer. The ferromagnetic and insulating layers were deposited through metallic masks to produce the cross pattern form. The junction has an active area of $0.3\times0.3\textrm{mm}^2$ and the $Al_2O_3$layer is deposited through a circular mask with a diameter of 1mm. It is very important that insulating layer is formed very thinly and uniformly in tunneling junction. The ferromagnetic layer was fabricated in optimum conditions and the surface of that was very flat, which was observed by AFM. Tunneling junction was confirmed through nonlinear I-V curve. $NiFe/Al_2O_3$/Co junction was observed for magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior and magnetoresistance property and magnetoresistance property is dependent on magnetization behavior of t재 ferromagnetic layer. The maximum magnetoresistance ratio was about 6.5%.

• Journal of Magnetics
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• v.4 no.1
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• pp.22-25
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• 1999

Recently we reported the evolutionary transition from the positive magnetoresistance to the negative was discovered in the transverse configuration as the thickness of permalloy film increases. The discovered peculiarities of positive magnetoresistance phenomenal were explained in the framework of the uniform rotation model of the film magnetization reversal.

• Journal of Korean Ophthalmic Optics Society
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• v.12 no.2
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• pp.13-17
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• 2007

Magnetoresistance(MR) in ferromagnetic thin film to make thermal evaporating method in various angle configurations were observed. The degree of transition from positive magnetoresistance to negative magnetoresistance is observed to 34 degree in anisotropy magnetoresistance experiment. In the angle configuration such that the film sample was placed perpendicular to the magnetic field, the difference of FDMP and degree of transition in iron and nickel films is observed due to the fundamental difference of magnetic easy axis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.934-940
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• 2001

Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.570-574
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• 1995

Magnetoresistance of NiFeCo/Cu/NiFeCo/FeMn uncoupled exchange biased sandwiches has been studied. The magnetoresistance change ratio, ${\Delta}R/R_{s}$ showed 4.1 % at a saturation field as low as 11 Oe in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(23\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. In this system, the magnetoresistance was affected by interlayer material and thickness. When Ti and Cu were used as the interlayer material in this structure, maximum magnetoresistance change ratio were 0.32 % and 4.1 %, respectively. 6.1 % MR ratio was obtained in $Si/Ti(50\;{\AA})/NiFeCo(70\;{\AA})/Cu(15\;{\AA})/NiFeCo(70\;{\AA})/FeMn(150\;{\AA})/Cu(50\;{\AA})$ spin valve structure. The magnetoresistance change ratio decreased monotonically as the interlayer thickness increased. It was found that the exchange bias field exerted by FeMn layer to the adjacent NiFeCo layer was ~25 Oe, far smaller than that reported in NiFe/Cu/NiFe/FeMn spin valve structure(Dieny et. al., ~400 Oe). The relationship between the film texture and exchange anisotropy ha been examined for spin valve structures with Ti, Cu, or non-buffer layer.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.31-31
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• 2006

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.115-119
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• 2004

We measured in-plane 2 dimensional magnetization vector using two pick-up coil sets and investigate the relationship between magnetization vector and anisotropic magnetoresistance. We can determine magnetization vector by measuring magnetic moment in x and y direction simultaneously. As the uniaxial magnetic anisotropy of permalloy film increases, magnetoresistance approaches the expectation which is calculated from the angle between current vector and magnetization vector. Magnetoresistance ratio is linearly proportional to the y moment magnitude which is parallel to the current direction.

• Proceedings of the Korean Magnestics Society Conference
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• 2015.05a
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• pp.156-157
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• 2015

we have presented the enhanced interlayer tunneling magnetoresistance in doped $La_{1+2x}Sr_{2-2x}Mn_2O_7$ single crystal below $T_C$. The drastically out-of-plane magnetoresistance observed in magnetic fields perpendicular to the bilayers indicates that spin-polarized magnetic layers in single crystal show as a stack of ordered spin valve.