JSTS:Journal of Semiconductor Technology and Science

  • 제6권3호
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  • Pages.175-181
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  • 2006
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

Wide Band-gap FETs for High Power Amplifiers

  • 발행 : 2006.09.30
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⟨ 이전 논문 다음 논문 ⟩

초록

Wide band-gap semiconductor electron devices have made great progresses to produce very high power amplifiers for various wireless standards. The advantages of wide band-gap electronic devices and their progresses are summarized in this paper.

키워드

참고문헌

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