JSTS:Journal of Semiconductor Technology and Science

  • 제6권1호
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  • Pages.1-9
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  • 2006
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

NANOCAD Framework for Simulation of Quantum Effects in Nanoscale MOSFET Devices

  • Jin, Seong-Hoon (School of Electrical Engineering and Computer Science and Nano Systems Institute-NCRC, Seoul National University) ;
  • Park, Chan-Hyeong (Department of Electronics and Communications Engineering, Kwangwoon University) ;
  • Chung, In-Young (Department of Electronic Engineering, Gyeongsang National University) ;
  • Park, Young-June (School of Electrical Engineering and Computer Science and Nano Systems Institute-NCRC, Seoul National University) ;
  • Min, Hong-Shick (School of Electrical Engineering and Computer Science and Nano Systems Institute-NCRC, Seoul National University)
  • 발행 : 2006.03.31
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초록

We introduce our in-house program, NANOCAD, for the modeling and simulation of carrier transport in nanoscale MOSFET devices including quantum-mechanical effects, which implements two kinds of modeling approaches: the top-down approach based on the macroscopic quantum correction model and the bottom-up approach based on the microscopic non-equilibrium Green’s function formalism. We briefly review these two approaches and show their applications to the nanoscale bulk MOSFET device and silicon nanowire transistor, respectively.

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참고문헌

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