$BaTiO_3$$TiO_2$ 분말이 혼합된 연마제 슬러리(MAS)를 사용한 BTO 박막의 CMP 특성

Chemical Mechanical Polishing Characteristics of BTO Films using $TiO_2$- and $BaTiO_3$-Mixed Abrasive Slurry (MAS)

  • 발행 : 2006.06.01

초록

In this study, the sputtered BTO film was polished by CMP process with the self-developed $BaTiO_3$- and $TiO_2$-mixed abrasives slurries (MAS), respectively. The removal rate of BTO ($BaTiO_3$) thin film using the $BaTiO_3$-mixed abrasive slurry (BTO-MAS) was higher than that using the $TiO_2$-mixed abrasives slurry ($TiO_2$-MAS) in the same concentrations. The maximum removal rate of BTO thin film was 848 nm/min with an addition of $BaTiO_3$ abrasive at the concentration of 3 wt%. The sufficient within-wafer non-uniformity (WIWNU%) below 5% was obtained in each abrsive at all concentrations. The surface morphology of polished BTO thin film was investigated by atomic force microscopy (AFM).

키워드

참고문헌

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