Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
권호 표지

Cyclic on/off Modulation of $CH_4\;and/or\;O_2$ Flows for the Enhancement of the Diamond Film Characteristics

$CH_4/O_2$의 사이클릭 유량제어에 의한 다이아몬드 박막의 특성향상

  • Kim Tae-Gyu (Dept. of Nanosystem & Nanoprocessing, Pusan National University) ;
  • Kim Sung-Hoon (Dept. of Electronic Materials, Silla University) ;
  • Yoon Su-Jong (Dept. of Nanomaterials Engineering, Pusan National University)
  • 김태규 (부산대학교 나노시스템공정공학과) ;
  • 김성훈 (신라대학교 전자재료공학과) ;
  • 윤수종 (부산대학교 나노정보소재공학과)
  • Published : 2006.04.01
Download PDF
⟨ Previous Next ⟩

Abstract

Diamond films were deposited on 10.0$\times$10.0$mm^2$ pretreated (100) Si substrate using $CH_4$, $H_2$ and $O_2$ source gases in a horizontal-type microwave plasma enhanced chemical vapor deposition system. We introduced a cyclic on/off modulation of $CH_4$ and/or $O_2$ flows is a function of the reaction time during the initial deposition stage. Surface morphology and diamond quality of the films were investigated as a function of the different cyclic modulation process of the source gases flows: For the enhancement of the nucleation density, there is an optimal process for the incorporation of oxygen. Diamond qualities of the films were improved by introducing oxygen gas during the initial deposition stage.

Keywords

References

  1. H. M. Liu, D. S. Dandy, Diamond Relat. Mater., 4 (1995) 1173 https://doi.org/10.1016/0925-9635(96)00297-2
  2. L. L. Regel, W. R. Wilcox, Acta Astronautica 48 (2001) 129 https://doi.org/10.1016/S0094-5765(00)00155-7
  3. S. T. Lee, Z. Lin, X. Jiang, Mater. Sci. and Eng., R 25 (1999) 123 https://doi.org/10.1016/S0927-796X(99)00003-0
  4. C. F. Chen, S. H. Chen, T. M. Hong, H. W. Ko, S. E. Sheu, Thin Solid Films 236 (1993) 120 https://doi.org/10.1016/0040-6090(93)90655-9
  5. Y. Liou, Y. R. Ma, Diamond Relat. Mater., 3 (1994) 573 https://doi.org/10.1016/0925-9635(94)90227-5
  6. S. Schelz, L. Martin, M. Moisan, Diamond Relat. Mater., 7 (1998) 1291 https://doi.org/10.1016/S0925-9635(98)00191-5
  7. S. S. Park, J. Y. Lee, J. Mater. Sci., 28 (1993) 1799 https://doi.org/10.1007/BF00595748
  8. S. H. Kim, Y. S. Park, I. T. Han, J. W. Lee, W. S. Yun, Appl, Phys. Lett., 69 (1996) 2184 https://doi.org/10.1063/1.117159
  9. J. W. Lee, S. H. Kim, Y. S. Park, I. T. Han, Thin Solid Films, 303 (1997) 264 https://doi.org/10.1016/S0040-6090(97)00025-4
  10. S. H. Kim, Y. S. Park, W. S. Yun, J. W. Lee, J. Cryst. Growth, 180 (1997) 198 https://doi.org/10.1016/S0022-0248(97)00209-1
  11. S. H. Kim, T. G. Kim, New Diamond and Frontier Carbon Technology, 13 (2003) 333
  12. D. S. Olson, M. A. Kelly, S. Kapoor, S. B. Hagstrom, J. Appl. Phys., 74 (1993) 5167 https://doi.org/10.1063/1.354281
  13. K. V. Ravi, A. Joshi, Appl. Phys. Lett., 58 (1991) 246 https://doi.org/10.1063/1.104703
  14. Y. Liou, Y. R. Ma, diamond Relat. Mater., 3 (1994) 573 https://doi.org/10.1016/0925-9635(94)90227-5