비정질 As-Ge-Se-S 박막에서 선택적 에칭을 통한 2차원 엠보싱형 홀로그램 제작

2- Dimensional Embossing Type Hologram Fabrication in Amorphous As-Ge-Se-S with the Selective Etching

  • 발행 : 2006.07.01

초록

In this paper, we investigated the selective etching rate of amorphous As-Ge-Se-S thin film due to the photoexpansion effect and fabricated the 2-dimensional embossing type diffraction grating hologram. We measured the thickness change with the etching time among NaOH solution after forming 1-dimension diffraction grating. As a results, we found that the selective etching rate were $2.5\AA/s,\;3.3\AA/s,\;3.9\AA/s$ where NaOH solution concentration were 0.26N, 0.33N, 0.36N, respectively. Also after the formation of 2-dimensional diffraction grating by the $90^{\circ}$ degree of circulation on the formed 1-dimensional diffraction grating, we etched selectively during 60sec, among 0.26N NaOH solution and obtained 2-dimensional embossing diffraction grating. As the results of AFM (Atomic Force Microscopy), we confirmed the formation of distinct embossing type 2-dimensional diffraction grating hologram, successfully.

키워드

참고문헌

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