한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제43권4호
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  • Pages.230-234
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  • 2006
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  • 1229-7801(pISSN)
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  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
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Al과 Ni를 이용한 비정질 실리콘의 결정화 거동

Crystallization behavior of Amorphous Silicon with Al and Ni

  • Kwon, Soon-Gyu (Korea Institute of Ceramic Engineering and Technology) ;
  • Choi, Kyoon (Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Byung-Ik (Korea Institute of Ceramic Engineering and Technology) ;
  • Hwang, Jin-Ha (Department of Material Science and Engineering, Hongik University)
  • 발행 : 2006.04.01
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초록

Metal-Induced Crystallization (MIC) of amorphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after Aluminum-Induced Crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.

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참고문헌

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