Journal of Magnetics

  • 제11권1호
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  • Pages.1-4
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  • 2006
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  • 1226-1750(pISSN)
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  • 2233-6656(eISSN)
한국자기학회 (The Korean Magnetics Society)
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Epitaxial Growth and Characterization of Zinc-blende CrAs/GaAs/MnAs/GaAs Multilayers

  • Wang W.H. (Research Consortium for Synthetic Nano-Function Materials Project(SYNAF), Nanotechnology Research Institute(NRI), National Institute of Advanced Industrial Science and Technology(AIST)) ;
  • Manago T. (Research Consortium for Synthetic Nano-Function Materials Project(SYNAF), Nanotechnology Research Institute(NRI), National Institute of Advanced Industrial Science and Technology(AIST)) ;
  • Akinaga H. (Research Consortium for Synthetic Nano-Function Materials Project(SYNAF), Nanotechnology Research Institute(NRI), National Institute of Advanced Industrial Science and Technology(AIST))
  • 발행 : 2006.03.01
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초록

We report on the growth, structural and transport properties of zinc-blende CrAs/GaAs/MnAs/GaAs multilayers on GaAs(001) substrates. Structural analyses using in-situ reflection high-energy electron diffraction and exsitu cross-sectional transmission electron microscopy confirmed the realization of a zinc-blende crystal structure. Room temperature Hall measurements reveal that the as-grown multilayer exhibits p-type conductivity with a very low resistivity of $0.052\;\omega{cm}$, a high carrier concentration of $6.2X10^{19}\;cm^{-3}$ and a Hall mobility of $1.8\;cm^2/Vs$. We also observed a clear decrease of the resistivity in samples after low temperature annealing.

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피인용 문헌

  1. Growth and transport studies of BaMn2As2 thin films vol.29, pp.3, 2011, https://doi.org/10.1116/1.3592991