Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characteristics and Microstructure of Co/Ni Composite Silicides on Polysilicon Substrates with Annealing Temperature

폴리실리콘 기판 위에 형성된 코발트 니켈 복합실리사이드 박막의 열처리 온도에 따른 물성과 미세구조변화

  • Kim, Sang-Yeob (Department of Materials Science and Engineering, University of Seoul) ;
  • Song, Oh-Sung (Department of Materials Science and Engineering, University of Seoul)
  • 김상엽 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과)
  • Published : 2006.09.27
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Abstract

Silicides have been required to be below 40 nm-thick and to have low contact resistance without agglomeration at high silicidation temperature. We fabricated composite silicide layers on the wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\sim}1100^{\circ}C$ for 40 seconds. The sheet resistance, surface composition, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a X-ray diffractometer, an Auger electron spectroscopy, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the fast metal diffusion along the silicon grain boundary lead to the poly silicon mixing and inversion. Our results imply that we may consider the serious thermal instability in designing and process for the sub-0.1 um CMOS devices.

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References

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