초록
The neutron transmutation doping of silicon (NTD), as a method to produce a high quality semiconductor, utilizes the transmutation of a silicon element into phosphorus by neutron absorption in a silicon single crystal. In this paper, we present the design of a neutron screen for a 6' Si ingot irradiation in the NTD2 hole of HANARO. The goal of the design is to achieve an even flat axial distribution of the resistivity, or $Si^{30}(n,{\gamma})Si^{31}$ reaction rate, in the irradiated Si ingot. We used the MCNP4C code to simulate the neutron screen and to calculate the reaction rate distribution in the Si ingot. The fluctuations in the axial distribution were estimated to be within ${\pm}2.0%$ from the average for the final neutron screen design; thus, they satisfy the customers' requirement for uniform irradiation. On the other hand, we determined the optimal insertion depths of the Si ingots by varying the critical control rod position, which greatly affects the axial flux distribution.
