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Surface morphology and electrical properties of ITO thin films fabricated by RF magnetron sputtering method

고주파 마그네트론 스퍼터링 방법으로 제작한 ITO 박막의 표면 형태 및 전기적 특성

  • Kwon, Sung-Yeol (Division of Electrical Control and Instrumentation, Pukyong National University)
  • 권성열 (부경대학교 전기제어계측공학부)
  • Published : 2006.01.31

Abstract

ITO (Indium Tin Oxide) thin films have been fabricated by rf magnetron sputtering with a target of a mixture $In_{2}O_{3]$(90 wt%) and $SnO_{2}$ (10 wt%). ITO films were sputtered with substrate temperature from 30 to $300^{\circ}C$ and working pressure from 1 to under 0.1 m Torr. ITO thin films surface morphology and electrical properties analyzed by SEM Photographs, and X-ray diffractions patterns. The resistivity of ITO thin films was $1.8{\times}10^{-5}{\Omega}/cm$.

Keywords

References

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