Transactions on Electrical and Electronic Materials

  • 제6권1호
  • /
  • Pages.22-24
  • /
  • 2005
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  • 1229-7607(pISSN)
  • /
  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Liquid Crystal Alignment on the SiC Thin Film by the Ion Beam Exposure Method

  • Park, Chang-Joon (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Hwang, Jeoung-Yeon (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kang, Hyung-Ku (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Kim, Young-Hwan (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Seo, Dae-Shik (Department of Electrical and Electronic Engineering, Yonsei University) ;
  • Ahn, Han-Jin (Department of Metallurgical Engineering, Yonsei University) ;
  • Kim, Kyung-Chan (Department of Metallurgical Engineering, Yonsei University) ;
  • Kim, Jong-Bok (Department of Metallurgical Engineering, Yonsei University) ;
  • Baik, Hong-Koo (Department of Metallurgical Engineering, Yonsei University)
  • 발행 : 2005.02.01
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초록

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87{\circ}$ of stable pretilt angle was achieved at the range from $30{\circ}$ to $45{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to $300{\circ}C$.

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참고문헌

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