한국통신학회논문지 (The Journal of Korean Institute of Communications and Information Sciences)

  • 제30권4A호
  • /
  • Pages.350-357
  • /
  • 2005
  • /
  • 1226-4717(pISSN)
  • /
  • 2287-3880(eISSN)
한국통신학회 (The Korean Institute of Commucations and Information Sciences)
권호 표지

DSRC 송신기를 위한 능동발룬 내장형 5.8 GHz SiGe 상향믹서 설계 및 제작

A 5.8 GHz SiGe Up-Conversion Mixer with On-Chip Active Baluns for DSRC Transmitter

  • 이상흥 (한국전자통신연구원 기반기술연구소 고속집적회로연구부 SiGe소자팀) ;
  • 이자열 (한국전자통신연구원 기반기술연구소 고속집적회로연구부 SiGe소자팀) ;
  • 김상훈 (한국전자통신연구원 기반기술연구소 고속집적회로연구부 SiGe소자팀) ;
  • 배현철 (한국전자통신연구원 기반기술연구소 고속집적회로연구부 SiGe소자팀) ;
  • 강진영 (한국전자통신연구원 기반기술연구소 고속집적회로연구부 SiGe소자팀) ;
  • 김보우 (한국전자통신연구원 기반기술연구소 고속집적회로연구부)
  • 발행 : 2005.04.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

근거리무선통신 (Dedicated Short Range Communication, DSRC)은 지능형교통시스템 서비스 제공을 위한 통신 수단으로, 수 미터에서 수백 미터인 근거리 영역의 노변장치(Road Side Equipment, RSE)와 차량탑재장치(On-Board Equipment, OBE)와의 양방향 고속통신을 수행하는 통신시스템이다. 본 논문에서는 SiGe HBT 공정을 이용하여 근거리무선통신 송신기용 5.8 GHz 상향믹서를 설계 및 제작하였다. 설계된 상향믹서는 믹서코어 회로와 더불어 IF/LO/RF 입출력 정합 회로, IF/LO 입력 발룬 회로와 RF 출력 발룬 회로가 단일칩으로 구현되었다. 제작된 상향믹서는 $2.7 mm\times1.6mm$의 크기를 가지며, 3.5 dB의 전력변환이득과 -12.5 dBm의 OIP3, 42 dB의 LO to E isolation, 38 dB의 LO to RF isolation, 3.0 V의 공급전압 하에서 29 mA의 전류소모로 측정되었다.

DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this paper, a 5.8 GHz up-conversion mixer for DSRC communication system was designed and fabricated using 0.8 m SiGe HBT process technology and IF/LO/RF matching circuits, IF/LO input balun circuits, and RP output balun circuit were all integrated on chip. The chip size of fabricated mixer was $2.7mm\times1.6mm$ and the measured performance was 3.5 dB conversion gain, -12.5 dBm output IP3, 42 dB LO to If isolation, 38 dB LO to RF isolation, current consumption of 29 mA for 3.0 V supply voltage.

키워드

참고문헌

  1. H. Oh, C. Yae, D. Ahn, and H. Cho, '5.8 GHz DSRC packet communication system for ITS Services,' IEEE Vehicular Technology Conference, pp. 2223-227, 1999 https://doi.org/10.1109/VETECF.1999.797333
  2. E.C. Low, K. Yan, H. Nakamura, H. Fujishiro, 'A plastic package GaAs MESFET 5.8-GHz receiver front-end with on-chip matching for ETC system,' IEEE Tran. on Microwave Theory and Techniques, 48(2), pp. 209-213, Feb. 2000 https://doi.org/10.1109/22.821763
  3. S.-Y. Lee, H.-S. Kim, S.-H. Lee, K.-H Shim, J.-Y. Kang, M.-K. Song, 'The behavior of Ti silicidation on Si/SiGe/Si base and its effect on base resistance and fmax in SiGe hetero-junction bipolar transistors,' Journal of Materials Science: Materials in Electronics, 12(8), pp. 467-472, August 2001 https://doi.org/10.1023/A:1011843517164
  4. B. Razavi, RF Microelectronics, Prentice Hall, Inc., pp. 166-204, 1998
  5. B. Gilbert, 'The multi-tanh Principle: A tutorial overview,' IEEE Journal of Solid-State Circuits, 33(1), pp. 2-17, Jan. 1998 https://doi.org/10.1109/4.654932
  6. S.-H. Lee, J.-Y. Lee, S.-Y. Lee, C.W. Park, S.H. Kim, H.-C. Rae, J.-Y. Kang, K.-I. Cho, 'A 5.8 GHz Mixer using SiGe HBT Process,' Conference Proceedings of 33rd European Microwave Conference, vol. I, pp. 403-406, Oct. 2003
  7. D.W. Sub, B.K. Mheen, J.Y. Kang, and M.C. Paek, 'Enhancement of Q factor in parallel-branch spiral inductors,' Journal of the Korean Institute of Electrical and Electronic Material Engineers, 16(1), pp. 83-87, Jan. 2003 https://doi.org/10.4313/JKEM.2003.16.1.083
  8. D.-Y. Kim, S.-G. Lee, J.-H. Lee, 'Up-conversion mixer for PCS application using Si BIT,' IEEE 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings, pp. 424-427, 2000
  9. K.L. Fong and R.G. Meyer, 'High-frequency nonlinearity analysis of common-emitter and differential-pair transconductance stages,' IEEE Journal of Solid-State Circuits, 33(4), pp. 548-555, April 1998 https://doi.org/10.1109/4.663559