The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Structural and Dielectric Properties of the PZT/BST Heterolayered Thin Films with RF Power

RF Power에 따른 PZT/BST 이종층 박막의 구조 및 유전 특성

  • 이상철 (광운대학 전자재료공학과) ;
  • 남성필 (광운대학 전자재료공학과) ;
  • 이성갑 (서남대학 전기전자공학과) ;
  • 이영희 (광운대학 전자재료공학과)
  • Published : 2005.01.01
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Abstract

The Pb(Zr/sub 0.52/Ti/sub 0.48/)O₃/(Ba/sub 0.6/Sr/sub 0.4/)TiO₃[PZT/BST] heterolayered thin films were deposited on Pt/Ti/SiO₂/Si substrates by using the RF sputtering method with different RF power. The PZT/BST heterolayered thin films had the tetragonal structure of the PZT phase and BST phase. Increasing the RF power. the intensity of the PZT (100), (110) peaks and BST (111) peaks were decreased and the intensity of the BST (100), (110) peaks were increased. The thickness ratio of the top layered BST thin film and the bottom layered PZT thin film was 2 to1. The atomic concentration of the Ba, Sr, Pb. Zr, Ti atoms were constant in the PZT thin films and BST thin films, respectively. The Pt atom was diffused to the PZT region in the PZT/BST heterolayered thin films deposited at condition of 60[W] RF power. Increasing the frequency, dielectric constant and loss of the PZT/BST heterolayered thin films were decreased. The dielectric constant and loss of the PZT/BST heterolayered thin films deposited with RF power of 90[W] were 406 and 3%, respectively.

Keywords

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