The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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Structural and Electrical Properties of Vanadium Oxide Thin Films Annealed in Vacuum

진공 어닐링한 바나듐 산화악의 구조적, 전기적 특성

  • 최복길 (공주대 공대 정보통신공학부) ;
  • 최창규 (서울산업대 전기공학과) ;
  • 권광호 (한서대 공대 전자공학과) ;
  • 김성진 (경남대 공대 전자전기공학부)
  • Published : 2005.01.01
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Abstract

Thin films of vanadium oxide(VO/sub x/) were deposited by r.f. magnetron sputtering from V₂O/sub 5/ target with oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% and in situ annealed in vacuum at 400℃ for 1h and 4h. Crystal structure, chemical composition, molecular structure, optical and electrical properties of films were characterized through XRD, XPS, RBS, FTIR, optical absorption and electrical conductivity measurements. The films as-deposited are amorphous, but 0%O₂ films annealed for time longer than 4h and 8% O₂ films annealed for time longer than 1h are polycrystalline. As the oxygen partial pressure is increased the films become more stoichiometric V₂O/sub 5/. When annealed at 400℃, the as-deposited films are reduced to a lower oxide. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Electrical conductivity and thermal activation energy are increased with increasing the annealing time and with decreasing the oxygen partial pressure.

Keywords

References

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