Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Color Difference Characterization on Nickel Silicides

니켈실리사이드의 색차분석

  • Jung Youngsoon (Department of Materials Science and Engineering, University of Seoul) ;
  • Song Ohsung (Department of Materials Science and Engineering, University of Seoul) ;
  • Kim Dugjoong (Department of Materials Science and Engineering, University of Seoul) ;
  • Choi Yongyun (Inter-university Semiconductor Research Center, Seoul National University) ;
  • Kim Chongjun (Inter-university Semiconductor Research Center, Seoul National University)
  • 정영순 (서울시립대학교 신소재공학과) ;
  • 송오성 (서울시립대학교 신소재공학과) ;
  • 김득중 (서울시립대학교 신소재공학과) ;
  • 최용윤 (서울대학교 반도체공동연구소) ;
  • 김종준 (서울대학교 반도체공동연구소)
  • Published : 2005.02.01
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Abstract

We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃～900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe micro-scope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.

Keywords

References

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