한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권2호
  • /
  • Pages.187-191
  • /
  • 2005
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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기판온도 및 Annealing에 따른 ZnGa2O4 형광체 박막의 특성

Characteristics of ZnGa2O4 Phosphor Thin Film with Temperature of Substrate and Annealing

  • 김용천 (경원대학교 전자전기정보공학부) ;
  • 홍범주 (경원대학교 전자전기정보공학부) ;
  • 권상직 (경원대학교 전자전기정보공학부) ;
  • 이달호 (경원대학교 전자전기정보공학부) ;
  • 김경환 (경원대학교 전자전기정보공학부) ;
  • 박용서 (경원대학교 전자전기정보공학부) ;
  • 최형욱 (경원대학교 전자전기정보공학부)
  • 발행 : 2005.02.01
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초록

A ZnGa$_2$O$_4$ phosphor target was synthesized through solid-state reactions at a calcine temperature of 700 $^{\circ}C$ and sintering temperature of 1300 $^{\circ}C$ in order to deposit ZnGa$_2$O$_4$ phosphor thin film at various temperature using rf magnetron sputtering system. A ZnGa$_2$O$_4$ phosphor thin film was deposited on Si(100) substrate and annealed by a rapid thermal processor(RTP) at 700 $^{\circ}C$, for 15 sec. The x-ray diffraction patterns of ZnGa$_2$O$_4$ phosphor target and thin film showed the main peak (311) direction. ZnGa$_2$O$_4$ thin film has better crystalization due to as function of increasing substrate and annealing temperature. The cathodoluminescence(CL) spectrums of ZnGa$_2$O$_4$ phosphor thin film showed the main peak 420 nm wavelength and the maximum intensity at the substrate temperature of 500 $^{\circ}C$ and annealing temperature of 700 $^{\circ}C$, for 15 sec.

키워드

참고문헌

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피인용 문헌

  1. Cathode luminescence characteristics of ZnGa2O4 phosphor thin films with the doped activator vol.126, pp.2, 2007, https://doi.org/10.1016/j.jlumin.2006.08.075