한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권2호
  • /
  • Pages.105-108
  • /
  • 2005
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

PLT buffer층의 삽입에 따른 강유전 PZT박막의 특성 향상

Enhancement of the Ferroelectric Properties of Pb(La1Ti)O3 Thin Films with Pb(La1Ti)O3Buffers Fabricated by Pulsed Laser Deposition

  • 임성훈 (연세대학교 전기전자공학과) ;
  • 이은선 (연세대학교 전기전자공학과) ;
  • 정현우 (연세대학교 전기전자공학과) ;
  • 전경아 (연세대학교 전기전자공학과) ;
  • 이상렬 (연세대학교 전기전자공학과)
  • 발행 : 2005.02.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The Pb(Zr,Ti)O$_3$ thin films were fabricated with Pb(La,Ti)O$_3$ buffers in-situ onto Pt/Ti/SiO$_2$/Si substrates by pulsed laser deposition method. We have observed the increase of the remanent polarization using PLT buffers. The remanent polarization value of 33.4 $\mu$C/$\textrm{cm}^2$ and the coercive field value of 66.4 kV/cm were obtained when the PLT tufter was deposited for 15 seconds. Enhancement of the polarization is resulted from the enhanced orientation of PZT thin film because of the PLT buffet layer.

키워드

참고문헌

  1. James F. Scott, Carlos A., and Paz de Araujo, 'Ferroelectric memories', Science, Vol. 246, No. 4936, p. 1400, 1989
  2. 김광호, '졸-겔법으로 형성한 강유전체 PZT 박막의 고온 단시간 열처리 효과 및 전자 디바이스에서의 응용', 전기전자재료학회논문지, 7권, 2호, p. 152, 1994
  3. 박 영, 정세민, 문상일, 정규원, 김성훈, 송준태, 이준신, 'PZT 강유전체 박막 캐패시터와 하부전극에 관한 연구', 전기전자재료학회논문지, 12권, 7호, p. 592, 1999
  4. Gouji Asano, Hitoshi Morioka, Hiroshi Funakubo, Tetsuo shibutami, and Noriaki Oshima, 'Fatigue-free $RuO_2/Pb(Zr,Ti)O_3/RuO_2$capacitor prepared by metalorganic chemical vapor deposition at $395^{\circ}C$', Appl, Phys. Lett., Vol. 83, No. 26, p. 5506, 2004
  5. Jiwei Zhai and Haydn Chen, 'Nonlinear behaviors of the compositionally graded $(Ba,Sr)TiO_3$ thin films derived by a sol-gel process', Appl. Phys. Lett., Vol. 84, No.7, p. 1162, 2004
  6. 강현일, 최장현, 박영, 송준태, '$Ru/RuO_2$ 전극에 성장한 PZT 박막의 특성에 관한 연구', 전기전자재료학회논문지, 15권, 10호, p. 865, 2002
  7. Yih-Rong Luo and Jenn-Ming Wn, '$BaPbO_3$ perovskite electrode for lead zirccnate titanate ferroelectric thin films', Appl. Phys. Lett., Vol. 79, No. 22, p. 3669, 2001
  8. Seong Jun Kang, Jeong Seon Ryoo, and Yung Sup Yoon, 'The effects of La concentration on the properties of PL T thin films : from the perspective of DRAM application', Mat. Res. Soc. Symp., Vol. 361, p. 281, 1995
  9. K. Maki, B. T. Liu, H. Vu, V. Nagarajan, and R. Ramesh, 'Controlling crystallization of $Pb(Zr,Ti)O_3$ thin films on $IrO_2$ electrodes at low temperature through interface engineering', Appl. Phys. Lett., Vol. 82, No. 8, p. 1263, 2003. https://doi.org/10.1063/1.1544057
  10. Xiaofeng Du and I-Wei Chen, 'Model experiments on fatigue of $Pb(Zr_{0.53}\;Ti_{0.47})O3$ ferroelectric thin films', Appl. Phys. Lett., Vol. 72, No. 15, p. 1923, 1998