한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권3호
  • /
  • Pages.264-268
  • /
  • 2005
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

Row Driver 회로가 집적된 2.2-inch QCIF+ a-Si TFT-LCD

2.2-inch QCIF+ a-Si TFT-LCD using Integrated Row Driver Circuits

  • 발행 : 2005.03.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

A 2.2-inch QCIF+(176${\times}$RGB${\times}$220) TFT-LCD with integrated row driver was developed using a standard amorphous silicon TFT technology. At low temperature, the integrated row driver operation is dramatically effected by the electron drift mobility reduction(■50 %) and the threshold voltage shift (■1V) of the a-Si TFT. We studied the dependency of circuit design and found that higher on-current circuit is important to guarantee good operation in wide temperature range.

키워드

참고문헌

  1. R. G. Stewart, J. Dresner, S. Weisbrod, R. I. Huq, and D. Plus 'Circuit Design for a-Si AMLCDs with Integrated Drivers', SID '1995 DIGEST paper, p. 89, 1995
  2. S. S. Han, K. M. Lim, J. S. Yoo, Y. S. Jeong, K. E. Lee, J. K. Park, D. H. Nam, S. W. Lee, J. M. Yoon, Y. H. jung, H. S. Seo, and C. D. Kim, '3.5 inch QVGA Low-Temperature Poly-Si TFT LCD with Integrated Driver Circuits', SID '2003 DIGEST paper, p. 208, 2003
  3. Toshihisa Tsukada, 'TFT/LCD-liquid crystal displays addressed by thin film transistors', Japanese Technology Reviews, Vol. 29, p. 62, 1996
  4. Hugues Lebrun, Nicolas Szydlo, and Eric Bidal, 'Threshold Voltage Drift of Amorphous Silicon TFT in Integrated Drivers for Active Matrix LCDs' , EuroDisplay '2002 paper, p. 83, 2002
  5. 윤영준, 정순선, 김태형, 박재우, 최종선, 'Semiempirical 정전용량 모델을 이용한 대면적.고화질 TFT-LCD의 화소 특성 시뮬레이션', 전기전자재료학회지, 12권, 10호, p. 924, 1999