한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권3호
  • /
  • Pages.193-198
  • /
  • 2005
  • /
  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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CSL-NOR형 SONOS 플래시 메모리의 멀티비트 적용에 관한 연구

Investigation for Multi-bit per Cell on the CSL-NOR Type SONOS Flash Memories

  • 김주연 (울산과학대학 전기전자통신학부 반도체응용전공) ;
  • 안호명 (광운대학교 전자재료공학과) ;
  • 이명식 (광운대학교 전자재료공학과) ;
  • 김병철 (진주산업대학교 전자공학과) ;
  • 서광열 (광운대학교 전자재료공학과)
  • 발행 : 2005.03.01
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초록

NOR type flash 32 ${\times}$ 32 way are fabricated by using the typical 0.35 ${\mu}{\textrm}{m}$ CMOS process. The structure of array is the NOR type with common source line. In this paper, optimized program and erase voltage conditions are presented to realize multi-bit per cell at the CSL-NOR array. These are considered selectivity of selected bit and disturbances of unselected bits. Retention characteristics of locally trapped-charges in the nitride layer are investigated. The lateral diffusion and vertical detrapping to the tunneling oxide of locally trapped charges as a function of retention time are investigated by using the charge pumping method. The results are directly shown by change of the trapped-charges quantities.

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참고문헌

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