한국재료학회지 (Korean Journal of Materials Research)

  • 제15권9호
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  • Pages.577-584
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  • 2005
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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무전해 도금법으로 제조된 Ni-B 확산 방지막의 Cu 확산 거동

Cu Diffusion Behavior of Ni-B Diffusion Barrier Fabricated by Electroless Deposition

  • Choi, Jae-Woong (Div. of Materials Science and Engineering, Hanyang Univ.,) ;
  • Hwang, Gil-Ho (Div. of Materials Science and Engineering, Hanyang Univ.,) ;
  • Han, Won-Kyu (Div. of Materials Science and Engineering, Hanyang Univ.,) ;
  • Lee, Wan-Hee (Div. of Materials Science and Engineering, Hanyang Univ.,) ;
  • Kang, Sung-Goon (Div. of Materials Science and Engineering, Hanyang Univ.,)
  • 발행 : 2005.09.01
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초록

Thin Ni-B layer, $1{\mu}m$ thick, was electrolessly deposited on Cu electrode fabricated by electro-deposition. The purpose of the layer is to encapsulate Cu electrodes for preventing Cu oxidation and to serve as a diffusion barrier. The layers were annealed at $580^{\circ}C$ with and without pre-annealing at $300^{\circ}C$ for . 30minutes. In the layer with pre-annealing, the amount of Cu diffusion was lower about 5 times than the layer without pre-annealing. The difference in Cu concentration may be attributed to $Ni_3B$ formation prior to Cu diffusion. However, the difference in Cu concentration decreased during the annealing time of 5 h due to the grain growth of Ni.

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