ETRI Journal

  • 제27권4호
  • /
  • Pages.433-438
  • /
  • 2005
  • /
  • 1225-6463(pISSN)
  • /
  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

Silicon Micro-probe Card Using Porous Silicon Micromachining Technology

  • Kim, Young-Min (Department of Electronics, Kyungpook National University, Korea Abrasive Ind. Co. Ltd.) ;
  • Yoon, Ho-Cheol (Korea Abrasive Ind. Co. Ltd.,) ;
  • Lee, Jong-Hyun (School of Electrical Engineering and Computer Science, Kyungpook National University)
  • 투고 : 2004.06.22
  • 발행 : 2005.08.31
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초록

We present a new type of silicon micro-probe card using a three-dimensional probe beam of the cantilever type. It was fabricated using KOH and dry etching, a porous silicon micromachining technique, and an Au electroplating process. The cantilever-type probe beam had a thickness of $5 {\mu}m$, and a width of $50{\mu}$ and a length of $800 {\mu}m$. The probe beam for pad contact was formed by the thermal expansion coefficient difference between the films. The maximum height of the curled probe beam was $170 {\mu}m$, and an annealing process was performed for 20 min at $500^{\circ}C$. The contact resistance of the newly fabricated probe card was less than $2{\Omega}$, and its lifetime was more than 20,000 turns.

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참고문헌

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