ETRI Journal

  • 제27권1호
  • /
  • Pages.75-80
  • /
  • 2005
  • /
  • 1225-6463(pISSN)
  • /
  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator

  • Kim, Young-Gi (Department of Data Communication, Anyang University) ;
  • Kim, Chang-Woo (College of Electronic and Information Engineering, Kyung Hee University) ;
  • Kim, Seong-Il (Basic Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Min, Byoung-Gue (Basic Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Lee, Jong-Min (Basic Research Laboratory, Electronics and Telecommunications Research Institute) ;
  • Lee, Kyung-Ho (Basic Research Laboratory, Electronics and Telecommunications Research Institute)
  • 투고 : 2004.04.08
  • 발행 : 2005.02.28
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초록

This paper addresses a fully-integrated low phase noise X-band oscillator fabricated using a carbon-doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves -127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X-band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a $0.8mm{\times}0.8mm$ die area.

키워드

참고문헌

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