Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Phosphorus and Arsenic Diffusion used by Ampoule-tube Method into Undoped ZnO Thin Films and the Electrical Properties of p-type ZnO Thin Films

Undoped ZnO 박막에 Ampoule-tube 방법을 이용한 P와 As의 확산과 p형 ZnO 박막의 전기적 특성

  • 소순진 ((주)나리지 온 옵토디바이스사업부) ;
  • 왕민성 (원광대학교 전기전자 및 정보공학부) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2005.11.01
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Abstract

To investigate the electrical properties of the ZnO films which are interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $2.1\;{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into the undoped ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3 hr. We found the diffusion condition of the conductive ZnO films which had n- and p-type properties. Our ZnO thin film has not only very high carrier concentration of above $10^{17}/cm^3$ but also low resistivity of below $2.0\times10^{-2}\;{\Omega}cm$.

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References

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