Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Deposition of ZnO Films for FBAR Device Fabrication

  • Song Hae-il (School of Engineering, Information and Communications University (ICU)) ;
  • Mai Linh (School of Engineering, Information and Communications University (ICU)) ;
  • Yim Munhyuk (Institute of Information Technology Assessment (IITA)) ;
  • Yoon Giwan (Information and Communications University (ICU))
  • Published : 2005.11.01
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Abstract

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency (RF) magnetron sputtering technique. It was found that the growth characteristics of the ZnO films have a strong dependence on the deposition temperature from 25 to $350^{\circ}C$. The ZnO films deposited below $200^{\circ}C$ exhibited reasonably good columnar grain structures with a highly preferred c-axis orientation while those above 200°C showed very poor columnar grain structures with a mixed-axis orientation. This study seems very useful for the future FBAR device applications.

Keywords

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