한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제18권10호
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  • Pages.877-882
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  • 2005
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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금속 가드 링이 SiC 쇼트키 다이오드의 항복전압에 미치는 영향

Effect on Metal Guard Ring in Breakdown Characteristics of SiC Schottky Barrier Diode

  • 발행 : 2005.10.01
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초록

In order to fabricate a high breakdown SiC-SBD (Schottky barrier diode), we investigate an effect on metal guard ring (MGR) in breakdown characteristics of the SiC-SBD. The breakdown characteristics of MGR-type SiC-SBD is significantly dependent on both the guard ring metal and the alloying time of guard ring metal. The breakdown characteristics of MGR-type SiC-SBDs are essentially improved as the alloying time of guard ring metal is increased. The SiC-SBD without MGR shows less than 200 V breakdown voltage, while the SiC-SBD with Al MGR shows approximately 700 V breakdown voltage. The improvement in breakdown characteristics is attributed to the field edge termination effect by the MGR, which is similar to an implanted guard ring-type SiC-SBD. There are two breakdown origins in the MGR-type SiC-SBD. One is due to a crystal defects, such as micropipes and stacking faults, in the Epi-layers and the SiC substrate, and occurs at a lower electric field. The other is due to the destruction of guard ring metal, which occurs at a higher electric field. The demolition of guard ring metal is due to the electric field concentration at an edge of Schottky contact metal.

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참고문헌

  1. S. Sriram, R. Siergiej, R. Clarke, A. Agarwal, and C. Brandt, 'SiC for microwave power transistors', Phys. Stat. Solidi(a), Vol. 162, No. 1, p. 441, 1997 https://doi.org/10.1002/1521-396X(199707)162:1<441::AID-PSSA441>3.0.CO;2-3
  2. C. Carter, J. Tsvetkov, R. Glass, D. Henshall, M. Brady, S. Muller, O. Kordina, K. Irvine, J. Edmond, H. Kong, R. Singo, S. Allen, and J. Palmour, 'Progress in SiC: from material growth to commercial device', Mater. Sci. Eng., Vol. B61, p. 1, 1999
  3. R. Clarke and J. Palmour, 'SiC microwave power technologies', Proc. of the IEEE, Vol. 90, No. 6, p. 987, 2002
  4. A. Elasser and T. Chow, 'Silicon carbide benefits and advantages for power electronics circuits and systems', Proc. of the IEEE, Vol. 90, No. 6, p. 969, 2002
  5. V. Saxena, J. Nong, and A. Steckl, 'High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination', IEEE Electron devices, Vol. 46, No. 3, p. 456, 1999
  6. K. Ueno, T. Urushidani, K. Hashimoto, and Y. Seki, 'The guard-ring termination for the high-voltage SiC Schottky barrier diodes', IEEE Electron device Lett., Vol. 16, No. 7, p. 331, 1995
  7. 김성진, 오동주, 김상철, 방욱, 유순재, 김송강, 'Field plate구조의 SiC 쇼트키 다이오드에서 산화막 중첩 폭에 대한 항복전압 의존성', 새물리, 51권, 2호, p. 169, 2005
  8. N. Lundberg and M. Ostling, 'Thermal stable low ohmic contacts to p-type 6H-SiC using cobalt silicides', Solid State Electronics, Vol. 39, No. 11, p. 1559, 1996 https://doi.org/10.1016/0038-1101(96)00071-8
  9. 오동주, 김성진, 한영헌, 김창연, 최용석, 유순재, '산화막 형성조건에 따른 field plate구조 SiC schottky barrier diode의 항복전압 의존성', 새물리, 51권, 1호, p. 66, 2005

피인용 문헌

  1. Conduction Properties of NitAI Ohmic Contacts to AI-implanted p-type 4H-SiC vol.22, pp.9, 2009, https://doi.org/10.4313/JKEM.2009.22.9.717