$SrTiO_{3}$ 세라믹 박막의 Ca 치환량에 따른 특성

Properties wRh Ca Substitutional Contents of $SrTiO_{3}$ Ceramic Thin Film

  • 발행 : 2005.09.01

초록

The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

키워드

참고문헌

  1. SUSUMU NISHIGAKI, KANJI MURANO et al., 'Dielectric Properties of Ceramics in the system $(Sr_{0.5}Pb_{0.25}Ca_{0.25})TiO_3Bi_2O_33TiO_2$ and Their Applications',J. Am.Ceram.Soc., Vol.65(11), pp.554-560, 1982 https://doi.org/10.1111/j.1151-2916.1982.tb10781.x
  2. D. W. Hoffman, and J. A. Thorton, 'Internal Stresses in Cr, Mo, Ta, and Pt Films Deposited by Sputtering from a Planar Magnetron Sources', J. Vac. Sci.&Technol., Vol.20(3), pp.355-358, 1982 https://doi.org/10.1116/1.571463
  3. S. Matsubara, S. Miura, Y. Miyasaka, and N. Shohata, 'Preparation of epitaxial $ABO_3$ Perovskite-type Oxide Thin Films on a(100) $MgAl_2O_4/Si$ Substrate',J.Appl. Phys., Vol.66(12), pp.5826-5832, 1989 https://doi.org/10.1063/1.343654
  4. Yoshio Abe, Midori Kawamura, 'Dielectric Properties of $SrTiO_3$ Capacitor Using TIN Bottom Electrode and Effects of $SrTiO_3$ Film Thickness', Jpn. J. Appl. Phys., Vol.36. pp.5175-5178, 1997 https://doi.org/10.1143/JJAP.36.5175
  5. C. A. T. Salama and E. Siciunas, 'Characteristics of rf Sputtered Barium Titanate Films on Silicon', J. Vac. Sci.&Technol., Vol.9(1), pp.91-96, 1971 https://doi.org/10.1116/1.1316695
  6. Neung-Ho Cho, Seunf-Hee Nam, 'Preparation of strontium titanate thin film on Si substrate by radio frequency magnetron sputtering', J. Vac. Sci. Technol., A10(1), pp.87-91, 1992 https://doi.org/10.1116/1.578071
  7. L. P. Cook, M. D. Vaudin et al., 'Microstructural Changes during Processing of Laser Deposited $BaTiO_3$ and PZT Thin films', MRS Symposium Proceeding, Vol.202, pp.241-245, 1991
  8. Z. Surowiak, A. M. Margolin, I. N. Zaharochenoko, and S. V. Biryukov, 'The Influence of structure on the Piezoelectric properties of $BaTiO_3$ and $(BaSr)TiO_3$ Thin Films with a Diffuse Phase Transition', Thin Solid Flims, Vol.176, pp.227-246, 1989 https://doi.org/10.1016/0040-6090(89)90096-5
  9. H. E. Weaver, 'Dielectric Properties of Single Crystals of $SrTiO_3$ at Low Temperatures', J. Phys. Chem. Solids, Vol.11, p.274, 1959 https://doi.org/10.1016/0022-3697(59)90226-4
  10. R. Wernicke, 'Two-Layer Model Explaining the properties of $SrTiO_3$ Boundary Layer Capacitior', Advances in Ceramics, Vol.1 pp.272-281, 1981
  11. Yoshitaka Nakano, Masamitsu Watanable, and Tomoharu Takahashi, 'Investigation of interface states in $(Sr,Ca)TiO_{3-x}$ based ceramic', J. Appl. Phys., Vol. 70, No. 3, pp.1539, 1991 https://doi.org/10.1063/1.349570
  12. W. Johnson, L.E. Cross, F.A. Hummel, 'Dielectric Relaxation in Strontium Titanates Containing Rare-Earth Lons', J. Appl. Phys., Vol. 41, pp.2828-2833, 1970 https://doi.org/10.1063/1.1659323
  13. A. N. Gubkin, A. J. Kashtanova, G. I. Skanavi, 'Dielectric Properties of Strontium Bismuth Titanates at Low Temperature', Fiz. Tverd. Teia., Vol.34, pp.1110-1116, 1961