• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.600-600
• /
• 2013

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.11
• /
• pp.70-77
• /
• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Journal of the Korean Vacuum Society
• /
• v.9 no.3
• /
• pp.242-248
• /
• 2000

BST thin films were prepared with various deposition conditions by rf-magnetron sputtering. As substrate temperature increases and Ar/$O_2$ratio decreases, the electrical properties of the BST films improve. The conventional Schottky model and modified-Schottky model were introduced in order to investigate the leakage-current-conduction mechanisms of the deposited films. It was found that the modified-Schottky model better describes the current-conduction mechanism in the BST films than the conventional Schottky model. From the modified-Schottky model, optical dielectric constant ($\varepsilon$), electronic drift mobility ($\mu$), and barrier height $({\phi}_b)are calculated as $\varepsilon$=4.9, $\mu$=0.019 $\textrm{cm}^2$/V-s, and ${\phi}_b=0.79 eV.

• Proceedings of the IEEK Conference
• /
• 2006.06a
• /
• pp.591-592
• /
• 2006

Schottky diodes for Radio-frequency identification (RFID) tag integration on chip were designed and fabricated using Samsung electronics System LSI standard $0.18{\mu}m$ CMOS process. Schottky diodes were designed as interdigitated fingers array by CMOS layout design rule. 64 types of Schottky diode were designed and fabricated with the variation of finger width, length and numbers with a $0.6{\mu}m$ guard ring enclosing n-well. Titanium was used as Schottky contact metal to lower the Schottky barrier height. Barrier height of the fabricated Schottky diode was 0.57eV. DC current - voltage measurements showed that the fabricated Schottky diode had a good rectifying properties with a breakdown voltage of -9.15 V and a threshold voltage of 0.25 V.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.05a
• /
• pp.40-40
• /
• 1999

• Journal of IKEEE
• /
• v.19 no.1
• /
• pp.94-100
• /
• 2015

In this paper, 50V power U-MOSFET which replace the body(PN) diode with Schottky is proposed. As already known, Schottky diode has the advantage of reduced reverse recovery loss than PN diode. Thus, the power MOSFET with integrated Schottky integrated can minimize the reverse recovery loss. The proposed Schottky body diode U-MOSFET(SU-MOS) shows reduction of reverse recovery loss with the same transfer, output characteristic and breakdown voltage. As a result, 21.09% reduction in peak reverse current, 7.68% reduction in reverse recovery time and 35% improvement in figure of merit(FOM) are observed when the Schottky width is $0.2{\mu}m$ and the Schottky barrier height is 0.8eV compared to conventional U-MOSFET(CU-MOS). The device characteristics are analyzed through the Synopsys Sentaurus TCAD tool.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.10
• /
• pp.618-622
• /
• 2014

The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.10
• /
• pp.25-34
• /
• 2002

In this paper, silicidation induced Schottky contact area was obtained using the current voltage(I-V) characteristics of shallow cobalt silicided p+-n and n+-p junctions. In reverse bias region, Poole-Frenkel barrier lowering influenced predominantly the reverse leakage current, masking thereby the effect of Schottky contact formation. However, Schottky contact was conclusively shown to be the root cause of the modified I-V behavior of n+-p junction in the forward bias region. The increase of leakage current in silicided n+-p diodes is consistent with the formation of Schottky contact via cobalt slicide penetrating into the p-substrate or near to the junction area and generating trap sites. The increase of reverse leakage current is proven to be attributed to the penetration of silicide into depletion region in case of the perimeter intensive n+-p junction. In case of the area intensive n+-p junction, the silicide penetrated near to the depletion region. There is no formation of Schottky contact in case of the p+-n junction where no increase in the leakage current is monitored. The Schottky contact amounting to less than 0.01% of the total junction was extracted by simultaneous characterization of forward and reverse characteristics of silicided n+-p diode.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.5
• /
• pp.573-576
• /
• 1992

Novel A1-Si Schottky diodes with self-aligned guard rings have been proposed and fabricated using RIE(Reactive Ion Etch). The breakdown voltage of the Schottky diode with the guard ring has been drastically increased to 200V or more in comparison with 46V for the metal overlap Schottky diode.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.1
• /
• pp.7-15
• /
• 2015

We have investigated electrical properties of graphene/Ge Schottky barrier diode (SBD) fabricated on Ge film epitaxially grown on Si substrate. When decreasing temperature, barrier height decreased and ideality factor increased, implying their strong temperature dependency. From the conventional Richardson plot, Richardson constant was much less than the theoretical value for n-type Ge. Assuming Gaussian distribution of Schottky barrier height with mean Schottky barrier height and standard deviation, Richardson constant extracted from the modified Richardson plot was comparable to the theoretical value for n-type Ge. Thus, the abnormal temperature dependent Schottky behavior of graphene/Ge SBD could be associated with a considerable deviation from the ideal thermionic emission caused by Schottky barrier inhomogeneities.