JSTS:Journal of Semiconductor Technology and Science

  • 제4권2호
  • /
  • Pages.106-109
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  • 2004
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

A High-Density 64k-Bit One-Time Programmable ROM Array with 3-Transistor Cell Standard CMOS Gate-Oxide Antifuse

  • Cha, Hyouk-Kyu (Dept. of EECS, KAIST also with MICROS Research Center) ;
  • Kim, Jin-Bong (System IC LDI team1, Hynix Semiconductor Inc.) ;
  • Lee, Kwy-Ro (Dept. of EECS, KAIST also with MICROS Research Center)
  • 발행 : 2004.06.30
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초록

A high-density 3-transistor cell one-time programmable (OTP) ROM array using standard CMOS Gate-Oxide antifuse (AF) is proposed, fabricated, and characterized with $0.18{\mu}m$ CMOS process. The proposed non-volatile high-density OTP ROM is composed of an array of 3-T OTP cells with the 3-T consisting of an nMOS AF, a high voltage (HV) blocking transistor, and a cell access transistor, all compatible with standard CMOS technology.

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참고문헌

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