The Transactions of the Korean Institute of Electrical Engineers C (대한전기학회논문지:전기물성ㆍ응용부문C)

The Korean Institute of Electrical Engineers (대한전기학회)
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The Fabrication Processes for the Planarization of Sacrificial Layers over Hollow Structures

Hollow Structure에서의 희생층 평탄화 제작 공정

  • Published : 2004.10.01
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Abstract

Two fabrication approaches are proposed to planarize the sacrificial layer over hollow structures. One is the photoresist filling method that makes use of photolithography, thermal curing and plasma ashing. The other is the lamination method that is applying pressure and temperature to the organic film over the hollow structures. The fabrication results are compared with those of CMP process. Trenches and cavities with various dimensions have been made for the porposed process. Upon measuring the planarization levels, they are dependent on planarization methods and the geometrical size of hollow structures. The photoresist filling method is so strongly dependent on the width and depth of trenches that we have problems to use it for large dimensional trenches. To the contrary, the flatness of sacrificial layer over the trenches was found to be almost independent of trench dimensions for the lamination method. A CMP process shows the most excellent results, but the fabrication is complicated and the access to it is not so easy. It is important to choose the proper planarization method by considering the required flatness levels, materials to be planarized, and connection between the planarization step and the previous or the following process of it.

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