Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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Effect of In2O3 Doping on the Properties of ZnO Films as a Transparent Conducting Oxide

투명전도성 ZnO 박막의 특성에 미치는 In2O3 첨가에 따른 영향

  • Lee, Choon-Ho (Department of Materials Engineering, Keimyung University) ;
  • Kim, Sun-Il (Department of Materials Engineering, Keimyung University)
  • 이춘호 (계명대학교 재료공학과) ;
  • 김선일 (계명대학교 재료공학과)
  • Published : 2004.01.01
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Abstract

Zinc Oxide (ZnO) have the crystal structure of wurtzite which is semiconducting oxide with band gap energy of 3.3eV. $In_2O_3$-doped ZnO films were fabricated by electron beam evaporation at $400^{\circ}C$ and their characteristics were investigated. The content of $In_2O_3$ in ZnO films had a marked effect on the electrical properties of the films. As $In_2O_3$ content decreased. $In_2O_3$-doped ZnO films was converted amorphous into crystallized films and showed a better characteristics generally as a transparent conducting oxide. As $In_2O_3$-doped ZnO films were prepared by $In_2O_3$-doped ZnO pellet with 0.2at% of $In_2O_3$ content, the value of resistivity was about $6.0 {\times} 10^{-3} {\Omega}cm$. The transmittance was higher than 85% throughout the visible range.

Zinc Oxide (ZnO)은 wurtzite 결정구조를 가지고 있으며, 밴드갭 에너지가 약 3.3eV로 반도성 산화물이다. $In_2O_3$이 첨가된 ZnO 박막을 점자빔증착법을 이용하여 1737F 유리기판에 제조하였다. $400^{\circ}C$의 증착온도에서 $In_2O_3$의 첨가량에 따른 ZnO 박막의 결정성, 미세구조를 비롯한 전기.광학적 특성을 조사하였다. 첨가되는 $In_2O_3$의 양에 따라 투명전도성 산화막으로써의 ZnO 박막의 특성이 변화되었다. $In_2O_3$의 첨가량이 감소할수록 비정질상에서 결정성의 ZnO 막을 얻을 수 있었다. 0.2at%의 $In_2O_3$가 첨가된 출발물질에서 제조된 $In_2O_3$-doped ZnO막은 약 $6.0 {\times} 10^{-3} {\Omega}cm$ 정도의 비저항값과 가시광선 영역에서 85% 이상의 광투과도를 나타내었다.

Keywords

References

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