참고문헌
- 김용주, 정희한 '고속전력변환용 반도체 Switching 소자(IGBT)의 기술 및 특허동향' 전기전자재료학회지, 13권 6호, p,2000
- W. D. Nowak, W. Wondrak, and D. Silber, 'Use of proton irradiation in semiconductor power devices technology', Archiv fur Elektrotechnik, Vol. 72, p. 133, 1989 https://doi.org/10.1007/BF01573646
- P. Hazdra and ]. Vobecky, 'Accurate simulation of fast ion irradiated power devices', Solid State Electronics, Vol. 37, Issue 1, p. 127, 1994 https://doi.org/10.1016/0038-1101(94)90116-3
- T. Flohr and R. Helbig, 'Determination of spatial variation of the carrier lifetime in a proton-irradiated Si N+-N-P+ diode by OBIC measurements', IEEE Transactions on Electron Devices, Vol. 37, Issue 9, p. 2076,1990 https://doi.org/10.1109/16.57171
- 김상철, 김은동 '전력반도체 기술 및 시장동향', 전기전자재료학회지, 15권, 3호, p.19, 2002
- Vitezslav Benda, John Gowar, and Duncan A. Grant, 'Power Semiconductor Devices Theory and Application', John Wiley and Son, p. 162, 1999
- Won-Chae jung, 'I-V and C-V Measurements of Fabricated P+/N junction Diode In Antimony dopedfl.l l rSilicon', Trans. EEM, Vol. 3, No.2, p. 10, 2002
- P. Cova, R. Menozzi, and M. Portesine, 'H+irradiation for reverse recovery softness and reliability of power p-i-n diodes for subberless applications', PROC. 23rd International Conference On Microelectronics,Vol. 1, p. 143, 2002
- Zhiyun Luo, Tianbing Chen, John D. Cressler, David C. Sheridan, John R.Williams, Robert A. Reed, and Paul W.Marshall, 'Impact of proton irradiation on the static and dynamic characteristics of High-voltage 4H-SiC JBS switching diodes', IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol. 50, Issue 6, p.1821, 2003 https://doi.org/10.1109/TNS.2003.821806
- P. Hazdra, K. Brand, J. Rubes, and J. Vobecky, 'Local lifetime control by lightion irradiation : impact on blocking capability of power P-i-N diode', Microelectronics Journal, Vol. 32, Issue 5-6, p. 450, 2001