전력전자학회지 (KIPE Magazine)

전력전자학회 (The Korean Institute of Power Electronics)
권호 표지

MOS Gate 형 전력 반도체의 개발 동향

  • 윤종만 (페어차일드코리아반도체 그룹장)
  • 발행 : 2004.12.01
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초록

키워드

참고문헌

  1. M.J.Dec1ereq and J.D.Plummer, ‘Avalanche breakdown high voltage D-MOS devices‘ IEEE Electron Devices, vol.ED-23,pp.1--6, 1976
  2. B. J. Baliga, 'The Insulated Gate Rectifier(IGR): A New Power Switching Devices' IEDM Tech. Dig., pp.264-265, 1982
  3. V. A. K. Temple, 'MOS Controlled Thyristors (MCTs),' IEDM Tech Dig.; pp.282-285, 1984
  4. B. J. Baliga, 'The MOS-gated Emitter Switched Thyristor,' IEEE Electron Device Letter, vol.11. no.2, pp.5-77, 1990
  5. D. Ueda et al, 'A New Vertical Power MOSFET Structure with Extremely reduced On-Resistance,' IEEE Electron Devices, vol. ED--32, No.I. pp.2--6, 1985
  6. G. Deboy et al. 'A New Generation of High Voltage MOSFETs breaks the limit of silicon: IEDM Tech. Dig., pp.683--685, 1998
  7. Miller and J. Sack, 'A new Concept for a Non Punchthrough IGBT with MOSFET like Switching Characteristics,' IEEE Power Electronics Specialists Conference, pp.21-25, 1989
  8. S. Peae et al,'Fully Self-Aligned Power TrenchMOSFET Utilizing 1 urn Pitch and 0.2urn trench Width,' Proc. of 14th ISPSD, pp.29-32, 2002
  9. R. Blenchard et aI, US patent 4,914,058, 1990
  10. D. Calafut, 'Trench Power MOSFET Lowside Switch with Optimized Integrated Schottky Diode,' Proe. of 16th ISPSD, pp.397-400, 2004
  11. A. Michandani. 'A Novel N-Channel MOSFET Featuring an Integrated Schottky and No Internal P-N Junction,' Proc. of 16th ISPSD, pp.405-408, 2004
  12. R Van et. al. 'Electrical Characteristics of Vertical Vapor Phase Doped(VPD) RESURF MOSFETs.' Proc. of 16th ISPSD, pp.451-454, 2004
  13. M. Kodama et al. 'Temperature Characteristics of a New 100V Rated Power MOSFET, VLMOS(Vertical LOCOS MOS):' Proc. of 16th ISPSD, pp.463-466, 2004
  14. M. Riib et al, '550V Superjunction 3.9$\ell$mm2 TransistorFormed by 25MeV Masked Boron Implantation,' Proc. of 16th ISPSD, pp.455-458, 2004
  15. D. R. Disney, 'A New 600V Lateral PMOS Device with a Buried Conduction Layer,' Proc. of 15th ISPSD, pp.41-44, 2003